International Symposium for Testing and Failure Analysis
November 6-10, 2016
- Fort Worth, Texas, USA
- Fort Worth Convention Center
Plan Today to Attend ISTFA 2016, November 6-10, 2016, at the Fort Worth Convention Center in Fort Worth, Texas, USA!
This year's theme is The Next Generation FA Engineer.
Change is the only constant in the Failure Analysis world. There is always the Next Generation technology to be understood, the Next Generation material to be learned, the Next Generation equipment to be mastered. In this changing world, the Next Generation constantly challenges the knowledge of today's engineers. The International Symposium for Testing and Failure Analysis (ISTFA) answers this challenge. At ISTFA, you can learn from the experts, network with people who can support your work, explore the latest apps and tools for the failure analysis lab, and become a knowable presenter yourself, teaching others. ISTFA offers opportunities for all levels of proficiency, from the Next Generation of engineers, who seek to boost their starting career, to expert engineers, who seek insight into Next Generation challenges already today.
Now accepting papers for the technical program of the 42nd International Symposium for Testing and Failure Analysis (ISTFA). Paper selection is based entirely on information submitted in abstracts and will be evaluated on novelty, completeness, quality, and benefit to the FA community. Submit your minimum two-page abstract including images, figures, and references.
Deadline for Abstract Submission: Extended to April 25, 2016
Visible Light LVP on Bulk Silicon Devices
Joshua Beutler, Science and Technology, Sandia National Laboratories, Albuquerque, NM, USA
Corrosion Mechanisms of Cu Bond Wires on AlSi Pads
Wentao Qin, Technology Assessment and Characterization Lab, ON Semiconductor, Phoenix, AZ, USA
IR Thermography, Running Bug inside Power MOSFET
Kevin Sanchez, Laboratories and Expertise, Quality Assurance, Centre National d'Etudes Spatiales (CNES), Toulouse, France
Selective Etching of Highly-p-doped Si Substrate Using Low-p-doped Si epi as an Etch Stop Layer
Valentina Korchnoy, FA, Intel Israel (74) Ltd, Haifa, Israel
MOFM: Magneto-Optical Frequency Mapping System for Very Low Resistance Short Failure Current Imaging
Tomonori Nakamura, Hamamatsu Photonics, Hamamatsu, Japan