Invensas Corp., San Jose, Calif., announces that Sandia National Laboratories has signed a new license agreement for ZiBond low-temperature homogeneous bonding technology and for Direct Bond Interconnect (DBI) technology, a low temperature, hybrid bonding technology for integrated electrical interconnects.
The ZiBond process enables the bonding of multiple materials in previously impossible combinations by using a very thin layer of materials such as silicon oxide or nitride to facilitate direct bonding. The technology enables room-temperature die or wafer-level 3D integration, without the need for the application of external pressure.
DBI enables silicon III-V and other substrates to be bonded and electrically interconnected in a 3D fashion, to maximize the density of signal paths between chips used to interconnect transistors and other components. It offers the industry’s finest pitch and lowest cost-of-ownership 3D interconnect platform.
“The demand for cost-effective, versatile, 2.5D and 3D integration technologies has risen significantly, as research and commercial enterprises seek to expand overall performance and functionality of electronics products,” said Craig Mitchell, President Invensas Corporation. “ZiBond and DBI technologies are currently deployed in leading edge semiconductor products, and we are pleased to now make them available to Sandia, a premier government research institution.”
Both ZiBond and DBI reportedly deliver the fastest bonding throughput currently available in the industry, resulting in up to a 15x increase in wafer bonding throughput. Both technologies offer the thinnest available 2.5D and 3D semiconductor assemblies, while reducing wafer warpage, increasing reliability, and improving thermal performance. Additionally, low processing temperatures significantly reduce equipment and process cost for high volume manufacturing.
