Thin films of germanium crystals grown at 250°C

Researchers at Kyushu University, Japan, report that they have developed a new technique to produce thin films of germanium crystals at a temperature of 250°C. Using gold as a catalyst, Prof. Taizoh Sadoh and his colleagues were able to grow germanium crystals in such a way that their crystal structure has the proper orientation and electrical properties. The new method can be used to produce germanium films with a very large area, allowing for more potential applications.

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Thallium-doped bismuth telluride topological insulator could enable advanced electronics

The University of Michigan, Ann Arbor, reports that its researchers have developed a thallium-doped bismuth telluride topological insulator, a material that conducts electricity on its surface, but not in its interior. With their new approach, the researchers can tweak the properties of the bulk of their material from a so-called “p-type” semiconductor, which conducts electricity because of a deficiency of electrons, to an “n-type,” which conducts because of an excess of electrons.

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