{"id":130,"date":"2014-06-03T16:29:58","date_gmt":"2014-06-03T16:29:58","guid":{"rendered":"https:\/\/staging.asminternational.org\/edfas\/2018_photo\/2010-2\/"},"modified":"2022-11-23T06:33:03","modified_gmt":"2022-11-23T06:33:03","slug":"2010-2","status":"publish","type":"page","link":"https:\/\/www.asminternational.org\/edfas\/events\/photo-contest\/2010-2\/","title":{"rendered":"2010"},"content":{"rendered":"<h1>2010 Photo Contest Winners<\/h1>\n<table border=\"1\" width=\"700\" cellspacing=\"0\" cellpadding=\"1\">\n<tbody>\n<tr>\n<td class=\"title\" style=\"width: 598px;\" colspan=\"2\" height=\"61\"><strong>Congratulations to the 2010 winners!<\/strong><\/td>\n<\/tr>\n<tr bgcolor=\"#d09800\">\n<td style=\"width: 598px;\" colspan=\"2\" height=\"20\"><a id=\"color\" name=\"color\"><\/a>\u00a0<strong>Category I: Color Images<\/strong><\/td>\n<\/tr>\n<tr>\n<td class=\"place_text\" style=\"width: 211px;\" valign=\"top\"><strong>1st Place:<\/strong><\/p>\n<div align=\"center\"><img decoding=\"async\" style=\"width: 200px; height: 150px;\" src=\"\/app\/uploads\/sites\/41\/files\/17848646\/2010CO_1.jpg\" alt=\"\" \/><\/div>\n<p style=\"text-align: center;\">Thomas Zirilli<br \/>\nFreescale Semiconducteurs France SAS<\/p>\n<p>That optical picture from the Backside of the Silicon die gives a nice &#8220;window view&#8221; on the logic circuitry. A chemical deprocessing allowed that intermediate step in the Physical characterization process.<\/td>\n<td class=\"lessontitle\" style=\"width: 387px;\">\n<div align=\"center\">\n<p><strong>2nd Place:<\/strong><\/p>\n<p><img decoding=\"async\" style=\"width: 200px; height: 150px;\" src=\"\/app\/uploads\/sites\/41\/files\/17848646\/2010CO_2.jpg\" alt=\"\" \/><br \/>\nAl Merino, Rebecca Burgin<br \/>\nON Semiconductor<\/p>\n<p>Which road should I take?<\/p>\n<p>Wrights Etch on Silicon<\/p>\n<\/div>\n<\/td>\n<\/tr>\n<tr>\n<td style=\"width: 211px;\" valign=\"top\"><strong>3rd Place:\u00a0<\/strong><\/p>\n<p style=\"text-align: center;\"><img decoding=\"async\" style=\"width: 200px; height: 204px;\" src=\"\/app\/uploads\/sites\/41\/files\/17848646\/2010CO_3.jpg\" alt=\"\" \/><br \/>\nTom Lesniewski, Nicholas Saintarbor,<br \/>\nBen Reed<br \/>\nNorthrop Grumman Corp<\/p>\n<p>Top down photo of brush pin connector contact with foreign material on the tip.\u00a0 The blue\/green color of the foreign material was an indicator of copper alloy corrosion byproducts.<\/p>\n<p style=\"text-align: center;\">\n<\/td>\n<td style=\"width: 387px;\">\n<p align=\"center\">\n<\/td>\n<\/tr>\n<tr bgcolor=\"#d09800\">\n<td style=\"width: 598px;\" colspan=\"2\"><a id=\"bw\" name=\"bw\"><\/a><strong>\u00a0<\/strong><strong>Category II: Black and White Images<\/strong><\/td>\n<\/tr>\n<tr>\n<td style=\"width: 211px;\" valign=\"top\">\n<p style=\"text-align: center;\"><strong>1st Place:<\/strong><\/p>\n<p style=\"text-align: center;\"><img decoding=\"async\" style=\"width: 200px; height: 151px;\" src=\"\/app\/uploads\/sites\/41\/files\/17848646\/2010BW_1.jpg\" alt=\"\" \/><\/p>\n<p style=\"text-align: center;\">\n<p style=\"text-align: center;\">Chistophe DeNardi, THALES ISS and<br \/>\nPhilippe Perdu, CNES<\/p>\n<p>A star is born. Heavy ion induced damage in a capacitor of an operational amplifier: the ionization path triggered a short circuit in the capacitor. The very short and intense discharge caused this submicron star shape underlined after localization and delayering at capacitance oxide level by secondary electrons imaging.<\/td>\n<td style=\"width: 387px;\">\n<div align=\"center\">\n<p><strong>2nd Place:<\/strong><strong>\u00a0<\/strong><\/p>\n<p><img decoding=\"async\" style=\"width: 200px; height: 184px;\" src=\"\/app\/uploads\/sites\/41\/files\/17848646\/2010BW_2.jpg\" alt=\"\" \/><\/p>\n<p>Morgan Cason, Davide Caccialanza<br \/>\nSTMicroelectronics<\/p>\n<p>Aways coke! FIB cross section of a damaged<br \/>\npower DMOS cell. The drain contact<br \/>\nis pushed into the silicon by an<br \/>\nElectrical Overstress event occurred<br \/>\nat the device output. Chemical<br \/>\ndecoration evidences the current path from<br \/>\nthe drain side to the substrate, with no<br \/>\ninvolvement of gate and source connectors.<\/p>\n<\/div>\n<\/td>\n<\/tr>\n<tr>\n<td style=\"width: 211px;\" valign=\"top\">\n<p style=\"text-align: center;\"><strong>3rd Place:<\/strong><\/p>\n<p style=\"text-align: center;\"><img decoding=\"async\" style=\"width: 200px; height: 150px;\" src=\"\/app\/uploads\/sites\/41\/files\/17848646\/2010BW_3.jpg\" alt=\"\" \/><\/p>\n<p style=\"text-align: center;\">Kevin Polito<br \/>\nHi-Rel Laboratories<\/p>\n<p>S.E.M Micrograph of a large whisker extruding from beneath a die bond on a active component.\u00a0 A potential conductive foreign particle able to bridge non-common elements if it were to break loose.\u00a0 Note additional smaller whiskers beginning to extrude from the bond pad metallization.<\/p>\n<p style=\"text-align: center;\">\n<\/td>\n<td style=\"width: 387px;\">\n<div align=\"center\"><\/div>\n<div align=\"center\"><\/div>\n<div align=\"center\"><\/div>\n<\/td>\n<\/tr>\n<tr bgcolor=\"#d09800\">\n<td class=\"blue_borderbottom\" style=\"width: 598px;\" colspan=\"2\"><a id=\"false\" name=\"false\"><\/a><strong>\u00a0<\/strong><strong>Category III: False Color Images<\/strong><\/td>\n<\/tr>\n<tr>\n<td style=\"width: 211px;\" valign=\"top\">\n<p style=\"text-align: center;\"><strong>1st Place:<\/strong><\/p>\n<p style=\"text-align: center;\"><img decoding=\"async\" style=\"width: 200px; height: 173px;\" src=\"\/app\/uploads\/sites\/41\/files\/17848646\/2010FC_1.jpg\" alt=\"\" \/><\/p>\n<p style=\"text-align: center;\">Julien Goxe<br \/>\nFreescale Semiconducteurs France SAS<\/p>\n<p>This is a SEM picture of a\u00a0 cross sectionned electronic component presenting a metallic particle embedded in the mold compound. It was a latent defect creating a leakage between two adjacent bond wires. The Backscattered Electron image with pseudo color make the different particle phases clearly visible.<\/p>\n<p style=\"text-align: center;\">\n<\/td>\n<td style=\"width: 387px;\">\n<div align=\"center\">\n<p><strong>2nd Place:<\/strong><\/p>\n<p><img decoding=\"async\" style=\"width: 200px; height: 160px;\" src=\"\/app\/uploads\/sites\/41\/files\/17848646\/2010FC_2.jpg\" alt=\"\" \/><\/p>\n<p>Herve Deslandes, Ph.D.<br \/>\nDCG Systems<\/p>\n<p>FA Instruments, San Jose, California<\/p>\n<p>NVIDIA graphics device. Trying to detect<br \/>\na few mOhms short inside the device requires<br \/>\nthe use of very low resistance wires, and<br \/>\nthey are the ones lighting up while doing<br \/>\nreal time lock in thermography.<\/p>\n<\/div>\n<\/td>\n<\/tr>\n<tr>\n<td style=\"width: 211px;\" valign=\"top\">\n<p style=\"text-align: center;\"><strong>3rd Place:<\/strong><\/p>\n<p style=\"text-align: center;\"><img decoding=\"async\" style=\"width: 200px; height: 192px;\" src=\"\/app\/uploads\/sites\/41\/files\/17848646\/2010FC_3.jpg\" alt=\"\" \/><\/p>\n<p style=\"text-align: center;\">Carl Wintgens<br \/>\nUBM TechInsights<\/p>\n<p>3D visualization of the varying dopant concentration within deep P-type isolation structures of a Power MOSFET.<br \/>\nThe image was acquired by Scanning Capacitance Microscopy (SCM).<\/p>\n<p style=\"text-align: center;\">\n<p>&nbsp;<\/td>\n<td style=\"width: 387px;\">\n<div align=\"center\"><\/div>\n<div align=\"center\"><\/div>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>2010 Photo Contest Winners Congratulations to the 2010 winners! \u00a0Category I: Color Images 1st Place: Thomas Zirilli Freescale Semiconducteurs France SAS That optical picture from the Backside of the Silicon die gives a nice &#8220;window view&#8221; on the logic circuitry. A chemical deprocessing allowed that intermediate step in the Physical characterization process. 2nd Place: Al&#8230; <a class=\"view-article\" href=\"https:\/\/www.asminternational.org\/edfas\/events\/photo-contest\/2010-2\/\">View Article<\/a><\/p>\n","protected":false},"author":3,"featured_media":0,"parent":1297,"menu_order":44,"comment_status":"open","ping_status":"closed","template":"","meta":{"_acf_changed":false,"footnotes":""},"class_list":["post-130","page","type-page","status-publish","hentry"],"bricks_content":"","yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.9 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>2010 - Electronic Device Failure Analysis Society<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.asminternational.org\/edfas\/events\/photo-contest\/2010-2\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"2010 - Electronic Device Failure Analysis Society\" \/>\n<meta property=\"og:description\" content=\"2010 Photo Contest Winners Congratulations to the 2010 winners! \u00a0Category I: Color Images 1st Place: Thomas Zirilli Freescale Semiconducteurs France SAS That optical picture from the Backside of the Silicon die gives a nice &#8220;window view&#8221; on the logic circuitry. 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