{"id":137,"date":"2014-06-04T15:28:43","date_gmt":"2014-06-04T15:28:43","guid":{"rendered":"https:\/\/staging.asminternational.org\/edfas\/2018_photo\/105-2\/"},"modified":"2022-11-23T06:36:29","modified_gmt":"2022-11-23T06:36:29","slug":"105-2","status":"publish","type":"page","link":"https:\/\/www.asminternational.org\/edfas\/105-2\/","title":{"rendered":"2003"},"content":{"rendered":"

2003 Photo Contest Winners<\/h1>\n\n\n\n\n\n\n\n\n\n\n\n\n
Congratulations to the 2003 winners!<\/strong><\/td>\n<\/tr>\n
<\/a>\u00a0Category I: Color Images<\/strong><\/td>\n<\/tr>\n
1st Place:<\/strong><\/p>\n

\"\"<\/p>\n

Gil Garteiz<\/p>\n

Tower Semiconductor, Israel<\/p>\n

High-mag optical photo of a backside delayered (upside down) 0.18um device. Here we see silicided active areas on top (white), poly gates behind (blue), and metal one (yellowish) an additional layer below. Metal 2 is even deeper, but out of focus.<\/p>\n

\n<\/td>\n

\n
\n

2nd Place:<\/strong><\/p>\n

\"\"
\nAng Chong Yong<\/p>\n

Agilent Technologies, Malaysia<\/p>\n

This is part of the housing structure of a CMOS image
\nsensor device. A round shape cover glass is assembled by
\nsome adhesive epoxy onto the lens holder. The
\nphoto reveals the effect of delamination between the
\ncover glass and the lens holder. Taking the shape
\nof the cover glass, it forms a colorful mini rainbow.<\/p>\n<\/div>\n<\/td>\n<\/tr>\n

3rd Place:\u00a0<\/strong><\/p>\n

\"\"<\/p>\n

Varaporn Suwanmethanond<\/p>\n

Gemfire Corporation, California<\/p>\n

Emerging bubbles showed the leak locations in the package during hermeticity test. This pointed out to the weakest solder-joint-area between the lid
\nand the package.<\/td>\n

\n

\n<\/td>\n<\/tr>\n

<\/a>\u00a0<\/strong>Category II: Black and White Images<\/strong><\/td>\n<\/tr>\n
1st Place:<\/strong><\/p>\n

\"\"<\/p>\n

Frank Martini<\/p>\n

Zilog, Idaho<\/p>\n

SEM image of a destructive latch-up site taken on a Phillip’s XL30 SFEG. The tungsten plugs and the silicon are deformed where a parasitic bipolar formed inducing latch-up current. Sample was de-processed using parallel polishing and wet etching.<\/td>\n

\n
\n

2nd Place:<\/strong>\u00a0<\/strong><\/p>\n

\"\"<\/p>\n

Jay Kopycinski<\/p>\n

Motorola, Arizona<\/p>\n

Surf’s Up – Electrical overstress at metal trace
\ncaused a molten “wave” of aluminum to reflow
\nthrough an ILD breach and solidify into
\nthis 3D structure.\n<\/p><\/div>\n<\/td>\n<\/tr>\n

3rd Place:<\/strong><\/p>\n

\"\"<\/p>\n

Marshall Hiew<\/p>\n

AMD, Malaysia<\/p>\n

High\u2013resolution SEM observation of a protrusion at the column of a memory array.Micrograph magnification is 150KX.<\/td>\n

\n
<\/div>\n
<\/div>\n
<\/div>\n<\/td>\n<\/tr>\n
<\/a>\u00a0<\/strong>Category III: False Color Images<\/strong><\/td>\n<\/tr>\n
1st Place:<\/strong><\/p>\n

\"\"<\/p>\n

Jiang Yaoyao<\/p>\n

IME, Singapore<\/p>\n

Scanning Capacitance Microscopy (SCM) imaging of a 0.80 \u00b5m n-channel transistor. Different colors represent different material types: purple\/pink N, red P, green\/black oxide and heavily doped material.<\/td>\n

\n
\n

2nd Place:<\/strong><\/p>\n

\"\"<\/p>\n

Jerry M. Soden and Ed I. Cole, Jr.<\/p>\n

Sandia National Labs, New Mexico<\/p>\n

Sub-surface OBIV signal of a RF diode
\ndefect with a fern-like microstructure.<\/p>\n<\/div>\n<\/td>\n<\/tr>\n

3rd Place:<\/strong><\/p>\n

\"\"
\nZhiyong Wang, Rajen Dias, Jan Gaudestad, Antonio Orozco<\/p>\n

Wang and Dias\u2014Intel Corporation, Arizona
\nGaudestad and Orozco\u2014Neocera, Maryland<\/p>\n

3D current glow. Signal 1 shorted to signal 9 through outside edge of the metal sealing ring of a optical multiplexer. The current density image showing parallel current paths through the short location including the current flowing in the sealing ring.<\/td>\n

\n
<\/div>\n
<\/div>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

 <\/p>\n","protected":false},"excerpt":{"rendered":"

2003 Photo Contest Winners Congratulations to the 2003 winners! \u00a0Category I: Color Images 1st Place: Gil Garteiz Tower Semiconductor, Israel High-mag optical photo of a backside delayered (upside down) 0.18um device. Here we see silicided active areas on top (white), poly gates behind (blue), and metal one (yellowish) an additional layer below. Metal 2 is… View Article<\/a><\/p>\n","protected":false},"author":3,"featured_media":0,"parent":0,"menu_order":222,"comment_status":"open","ping_status":"closed","template":"","meta":{"_acf_changed":false,"footnotes":""},"class_list":["post-137","page","type-page","status-publish","hentry"],"bricks_content":"","yoast_head":"\n2003 - Electronic Device Failure Analysis Society<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.asminternational.org\/edfas\/105-2\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"2003 - Electronic Device Failure Analysis Society\" \/>\n<meta property=\"og:description\" content=\"2003 Photo Contest Winners Congratulations to the 2003 winners! \u00a0Category I: Color Images 1st Place: Gil Garteiz Tower Semiconductor, Israel High-mag optical photo of a backside delayered (upside down) 0.18um device. Here we see silicided active areas on top (white), poly gates behind (blue), and metal one (yellowish) an additional layer below. Metal 2 is... 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