{"id":3980,"date":"2017-05-21T20:49:16","date_gmt":"2017-05-21T20:49:16","guid":{"rendered":"https:\/\/staging.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/27387009\/NEWS\/"},"modified":"2023-02-07T04:52:52","modified_gmt":"2023-02-07T04:52:52","slug":"win-semiconductors-completes-expansion-increases-gaas-wafer-capacity-by-20","status":"publish","type":"post","link":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/27387009\/NEWS\/","title":{"rendered":"WIN Semiconductors completes expansion, increases GaAs wafer capacity by 20%"},"content":{"rendered":"<p>\n\tWIN Semiconductors Corp., Taiwan, has completed Phase 2 expansion at its newest wafer fab, Fab C, increasing manufacturing capacity by 20%. The facility is now fitted with clean rooms, efficient process lines, and advanced equipment for GaAs MMIC production. It also has capability for epitaxial growth of compound semiconductors, and fabrication and test of optical devices.<\/p>\n<p>\n\t&#8220;When fully built out, the 706,000-sq.ft. facility will more than double our capacity,&#8221; said Kyle Chen, Senior Vice President and Chief Operating Officer of WIN Semiconductors. Continued build-out of the new manufacturing facility further validates the pure-play foundry model in the compound semiconductor industry.<\/p>\n<p>\n\tServing customers in mobile PA, WiFi, wireless infrastructure, and optical markets, WIN Semiconductors provides a broad portfolio of hetero-junction bipolar transistor (HBT), pseudomorphic high electron mobility transistor (pHEMT), integrated BiHEMT technology solutions, and optical devices. WIN Semiconductors&#8217; manufacturing services can support most any application from 50MHz to 150GHz and through light-wave.<\/p>\n<p>\n\t<a href=\"http:\/\/www.winfoundry.com\/\">www.winfoundry.com<\/a><\/p>\n<p>\n\t&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>WIN Semiconductors Corp., Taiwan, has completed Phase 2 expansion at its newest wafer fab, Fab C, increasing manufacturing capacity by 20%.<\/p>\n","protected":false},"author":63082,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[434,450,438,435,436,1],"tags":[],"class_list":["post-3980","post","type-post","status-publish","format-standard","hentry","category-electronics","category-general","category-nanotechnology","category-news","category-news-articles","category-uncategorized"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.9 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>WIN Semiconductors completes expansion, increases GaAs wafer capacity by 20% - Electronic Device Failure Analysis Society<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/27387009\/NEWS\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"WIN Semiconductors completes expansion, increases GaAs wafer capacity by 20% - Electronic Device Failure Analysis Society\" \/>\n<meta property=\"og:description\" content=\"WIN Semiconductors Corp., Taiwan, has completed Phase 2 expansion at its newest wafer fab, Fab C, increasing manufacturing capacity by 20%.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/27387009\/NEWS\/\" \/>\n<meta property=\"og:site_name\" content=\"Electronic Device Failure Analysis Society\" \/>\n<meta property=\"article:published_time\" content=\"2017-05-21T20:49:16+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2023-02-07T04:52:52+00:00\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/27387009\\\/NEWS\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/27387009\\\/NEWS\\\/\"},\"author\":{\"name\":\"\",\"@id\":\"\"},\"headline\":\"WIN Semiconductors completes expansion, increases GaAs wafer capacity by 20%\",\"datePublished\":\"2017-05-21T20:49:16+00:00\",\"dateModified\":\"2023-02-07T04:52:52+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/27387009\\\/NEWS\\\/\"},\"wordCount\":163,\"publisher\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#organization\"},\"articleSection\":[\"Electronics\",\"general\",\"Nanotechnology\",\"news\",\"News Articles\"],\"inLanguage\":\"en-US\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/27387009\\\/NEWS\\\/\",\"url\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/27387009\\\/NEWS\\\/\",\"name\":\"WIN Semiconductors completes expansion, increases GaAs wafer capacity by 20% - 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