{"id":4169,"date":"2016-03-19T14:29:13","date_gmt":"2016-03-19T14:29:13","guid":{"rendered":"https:\/\/staging.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/26218905\/NEWS\/"},"modified":"2023-02-07T04:53:06","modified_gmt":"2023-02-07T04:53:06","slug":"market-for-gan-and-sic-power-semiconductors-to-top-1b-in-2020","status":"publish","type":"post","link":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/26218905\/NEWS\/","title":{"rendered":"Market for GaN and SiC power semiconductors to top $1B in 2020"},"content":{"rendered":"<p>\n\tIHS Inc., Englewood, Colo., reports that the emerging market for silicon carbide and gallium nitride power semiconductors is forecast to pass the $1 billion mark in five years, energized by demand from hybrid and electric vehicles, power supplies, and photovoltaic inverters. Worldwide revenue from sales of SiC and GaN power semiconductors is projected to rise to $3.7 billion in 2025, up from just $210 million in 2015. Market revenue is also expected to rise with double digit growth annually for the next decade.<\/p>\n<p>\n\tSiC Schottky diodes have been on the market for more than ten years, with SiC metal-oxide semiconductor field-effect transistors, junction-gate field-effect transistors, and bipolar junction transistors appearing in recent years.<\/p>\n<p>\n\tSiC MOSFETs are proving very popular among manufacturers, with several companies already offering them, and more expected in the coming year. The introduction of 900-volt SiC MOSFETs, priced to compete with silicon SuperJunction MOSFETs, as well as increased competition among suppliers, forced average prices to fall in 2015.<\/p>\n<p>\n\t&#8220;Declining prices will spur faster adoption of the technology,&#8221; said&nbsp;Richard Eden, senior market analyst for power semiconductor discretes and modules at IHS Technology. &#8220;In contrast, GaN power transistors and GaN modules have only just recently appeared in the market. GaN is a wide bandgap material offering similar performance benefits to SiC, but with greater cost-reduction potential. This price and performance advantage is possible because GaN power devices can be grown on silicon substrates that are larger and less expensive than SiC. Although GaN transistors are now entering the market, the development of GaN Schottky diodes has virtually stopped.&#8221;<\/p>\n<p>\n\tBy 2020, GaN-on-silicon devices are expected to achieve price parity with \u2014 and the same superior performance as \u2014 silicon MOSFETs and insulated-gate bipolar transistors (IGBTs). When this benchmark is reached, the GaN power market is expected to surpass $600 million in 2025. In contrast, the more established SiC power market \u2014 mainly consisting of SiC power modules \u2014 will hit $3 billion in the same time period.<\/p>\n<p>\n\t<a href=\"http:\/\/www.ihs.com\/\" style=\"font-family: Helvetica, Arial, sans-serif; font-size: 0.9375em; line-height: 1.33333em;\">www.ihs.com<\/a><\/p>\n<p>\n\t&nbsp;<\/p>\n<p>\n\t&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>IHS Inc., Englewood, Colo., reports that the emerging market for silicon carbide and gallium nitride power semiconductors is forecast to pass the $1 billion mark in five years, energized by demand from hybrid and electric vehicles, power supplies, and photovoltaic inverters.<\/p>\n","protected":false},"author":63082,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[446,434,450,438,435,436,1],"tags":[],"class_list":["post-4169","post","type-post","status-publish","format-standard","hentry","category-consumer-products","category-electronics","category-general","category-nanotechnology","category-news","category-news-articles","category-uncategorized"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.9 - 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