{"id":4271,"date":"2015-08-14T00:37:23","date_gmt":"2015-08-14T00:37:23","guid":{"rendered":"https:\/\/staging.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/25693322\/NEWS\/"},"modified":"2023-02-07T04:53:14","modified_gmt":"2023-02-07T04:53:14","slug":"oxford-instruments-launches-silicon-drift-detector-with-ultrahigh-resolution-at-low-kv","status":"publish","type":"post","link":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/25693322\/NEWS\/","title":{"rendered":"Oxford Instruments launches silicon drift detector with ultrahigh resolution at low kV"},"content":{"rendered":"<p>\n\tOxford Instruments, U.K., has launched X-Max Extreme, a silicon drift detector for ultrahigh resolution FEG and FIB-SEM applications. It is a windowless 100 mm<span style=\"font-size:12px;\"><sup>2<\/sup><\/span> version of X-Max designed to maximize sensitivity and spatial resolution. It is based on a radical geometry to optimize both imaging and EDS performance in ultrahigh resolution FEG-SEMs while working at low kV and short working distance.<\/p>\n<p>\n\tThis unique detector for the first time enables EDS data collection at very low kV (between 1 and 3 kV) and a very short working distance to provide elemental analysis under the same conditions as those for analyzing nano-materials and surfaces at the highest SEM resolution.<\/p>\n<p>\n\tThe latest ultra-high resolution FEG-SEMs offer new capabilities for investigating smaller nano-structures, interfaces, and surfaces. However, under the operating conditions needed to make use of new electron signal contrasts from in-lens detectors (very short working distance, very low kV, and minimal beam current ) no traditional SDD could provide supporting elemental characterization. The new X-Max Extreme changes this. With X-Max Extreme, both imaging and EDS performance can be carried out simultaneously, and the EDS resolution approaches that of the SEM.<\/p>\n<p>\n\tX-Max Extreme is based on a windowless 100 mm<span style=\"font-size:12px;\"><sup>2<\/sup><\/span> detector; its radical geometry enables data acquisition under short working distance. It therefore provides elemental analysis under the same conditions for analysis of nano-materials and surfaces at the highest SEM resolution.<\/p>\n<p>\n\tAccording to X-ray Business Manager, Dr. Simon Burgess, &#8220;X-Max delivers solutions beyond conventional micro- and nano-analysis.&nbsp; For example, the sensitivity of the Extreme allows users to characterize the composition and distribution of surface contaminants and layers a few atoms thick. It also provides superb detection of light elements, including lithium.&#8221;<\/p>\n<p>\n\twww.oxford-instruments.com&nbsp;<\/p>\n<p>\n\t&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Oxford Instruments, U.K., has launched X-Max Extreme, a silicon drift detector for ultrahigh resolution FEG and FIB-SEM applications.<\/p>\n","protected":false},"author":63082,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[434,450,438,435,436,1],"tags":[],"class_list":["post-4271","post","type-post","status-publish","format-standard","hentry","category-electronics","category-general","category-nanotechnology","category-news","category-news-articles","category-uncategorized"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.9 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Oxford Instruments launches silicon drift detector with ultrahigh resolution at low kV - Electronic Device Failure Analysis Society<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/25693322\/NEWS\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Oxford Instruments launches silicon drift detector with ultrahigh resolution at low kV - Electronic Device Failure Analysis Society\" \/>\n<meta property=\"og:description\" content=\"Oxford Instruments, U.K., has launched X-Max Extreme, a silicon drift detector for ultrahigh resolution FEG and FIB-SEM applications.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/25693322\/NEWS\/\" \/>\n<meta property=\"og:site_name\" content=\"Electronic Device Failure Analysis Society\" \/>\n<meta property=\"article:published_time\" content=\"2015-08-14T00:37:23+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2023-02-07T04:53:14+00:00\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/25693322\\\/NEWS\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/25693322\\\/NEWS\\\/\"},\"author\":{\"name\":\"\",\"@id\":\"\"},\"headline\":\"Oxford Instruments launches silicon drift detector with ultrahigh resolution at low kV\",\"datePublished\":\"2015-08-14T00:37:23+00:00\",\"dateModified\":\"2023-02-07T04:53:14+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/25693322\\\/NEWS\\\/\"},\"wordCount\":291,\"publisher\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#organization\"},\"articleSection\":[\"Electronics\",\"general\",\"Nanotechnology\",\"news\",\"News Articles\"],\"inLanguage\":\"en-US\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/25693322\\\/NEWS\\\/\",\"url\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/25693322\\\/NEWS\\\/\",\"name\":\"Oxford Instruments launches silicon drift detector with ultrahigh resolution at low kV - 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Electronic Device Failure Analysis Society","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/25693322\/NEWS\/","og_locale":"en_US","og_type":"article","og_title":"Oxford Instruments launches silicon drift detector with ultrahigh resolution at low kV - Electronic Device Failure Analysis Society","og_description":"Oxford Instruments, U.K., has launched X-Max Extreme, a silicon drift detector for ultrahigh resolution FEG and FIB-SEM applications.","og_url":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/25693322\/NEWS\/","og_site_name":"Electronic Device Failure Analysis Society","article_published_time":"2015-08-14T00:37:23+00:00","article_modified_time":"2023-02-07T04:53:14+00:00","twitter_card":"summary_large_image","twitter_misc":{"Written by":"","Est. reading time":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/25693322\/NEWS\/#article","isPartOf":{"@id":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/25693322\/NEWS\/"},"author":{"name":"","@id":""},"headline":"Oxford Instruments launches silicon drift detector with ultrahigh resolution at low kV","datePublished":"2015-08-14T00:37:23+00:00","dateModified":"2023-02-07T04:53:14+00:00","mainEntityOfPage":{"@id":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/25693322\/NEWS\/"},"wordCount":291,"publisher":{"@id":"https:\/\/www.asminternational.org\/edfas\/#organization"},"articleSection":["Electronics","general","Nanotechnology","news","News Articles"],"inLanguage":"en-US"},{"@type":"WebPage","@id":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/25693322\/NEWS\/","url":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/25693322\/NEWS\/","name":"Oxford Instruments launches silicon drift detector with ultrahigh resolution at low kV - Electronic Device Failure Analysis Society","isPartOf":{"@id":"https:\/\/www.asminternational.org\/edfas\/#website"},"datePublished":"2015-08-14T00:37:23+00:00","dateModified":"2023-02-07T04:53:14+00:00","breadcrumb":{"@id":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/25693322\/NEWS\/#breadcrumb"},"inLanguage":"en-US","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/25693322\/NEWS\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/25693322\/NEWS\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/www.asminternational.org\/edfas\/"},{"@type":"ListItem","position":2,"name":"Oxford Instruments launches silicon drift detector with ultrahigh resolution at low kV"}]},{"@type":"WebSite","@id":"https:\/\/www.asminternational.org\/edfas\/#website","url":"https:\/\/www.asminternational.org\/edfas\/","name":"Electronic Device Failure Analysis Society","description":"Electronic Device Failure Analysis Society","publisher":{"@id":"https:\/\/www.asminternational.org\/edfas\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.asminternational.org\/edfas\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"en-US"},{"@type":"Organization","@id":"https:\/\/www.asminternational.org\/edfas\/#organization","name":"Electronic Device Failure Analysis Society","url":"https:\/\/www.asminternational.org\/edfas\/","logo":{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/www.asminternational.org\/edfas\/#\/schema\/logo\/image\/","url":"https:\/\/cdn-prd-main.asm-media.cloud\/uploads\/sites\/41\/2022\/10\/layout_set_logo.png","contentUrl":"https:\/\/cdn-prd-main.asm-media.cloud\/uploads\/sites\/41\/2022\/10\/layout_set_logo.png","width":360,"height":95,"caption":"Electronic Device Failure Analysis Society"},"image":{"@id":"https:\/\/www.asminternational.org\/edfas\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"","url":"https:\/\/www.asminternational.org\/edfas\/author\/"}]}},"acf":[],"_links":{"self":[{"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/posts\/4271","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/users\/63082"}],"replies":[{"embeddable":true,"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/comments?post=4271"}],"version-history":[{"count":0,"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/posts\/4271\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/media?parent=4271"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/categories?post=4271"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/tags?post=4271"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}