{"id":4365,"date":"2015-01-17T21:44:03","date_gmt":"2015-01-17T21:44:03","guid":{"rendered":"https:\/\/staging.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/23431600\/NEWS\/"},"modified":"2023-02-07T04:53:21","modified_gmt":"2023-02-07T04:53:21","slug":"germanium-replaces-silicon-in-cmos-device","status":"publish","type":"post","link":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/23431600\/NEWS\/","title":{"rendered":"Germanium replaces silicon in CMOS device"},"content":{"rendered":"<p>\n\tResearchers at Purdue University, West Lafayette, Ind., have created the first modern complementary metal-oxide-semiconductor device in which germanium is the semiconductor instead of silicon. Germanium is being considered to replace silicon because it could enable the industry to make smaller transistors and more compact integrated circuits. Germanium is also said to have a higher mobility for electrons and electron holes, which enables ultra-fast circuits.<\/p>\n<p>\n\tIn new findings (&#8220;First Experimental Demonstration of Ge CMOS Circuits&#8221;), Purdue researchers show how to use germanium to produce two types of transistors needed for CMOS electronic devices. The material had previously been limited to &#8220;P-type&#8221; transistors. The findings show how to use the material also to make &#8220;N-type&#8221; transistors. Because both types of transistors are needed for CMOS circuits, it may now be possible for germanium to be applied in computers and electronics.<\/p>\n<p>\n\tThe material has properties that make it difficult to create an N-type contact with low electrical resistance for good current flow. However, the germanium can be doped with impurities that alter its properties. The areas containing the most impurities have the lowest resistance. The researchers showed how to etch away the top layer of germanium, exposing the most heavily doped portion, which provides good contact.<\/p>\n<p>\n\tThe etching creates recessed channels, which serve as gates needed for CMOS transistors to switch on and off. Research shows the fundamental part of the circuit, called the inverter, is the best-performing non-silicon inverter demonstrated so far.<\/p>\n<p>\n\t<a href=\"http:\/\/www.purdue.edu\/\">www.purdue.edu<\/a><\/p>\n<p>\n\t&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Researchers at Purdue University, West Lafayette, Ind., have created the first modern complementary metal-oxide-semiconductor device in which germanium is the semiconductor instead of silicon.<\/p>\n","protected":false},"author":63082,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[434,450,435,436,1],"tags":[],"class_list":["post-4365","post","type-post","status-publish","format-standard","hentry","category-electronics","category-general","category-news","category-news-articles","category-uncategorized"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.9 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>Germanium replaces silicon in CMOS device - Electronic Device Failure Analysis Society<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/23431600\/NEWS\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Germanium replaces silicon in CMOS device - Electronic Device Failure Analysis Society\" \/>\n<meta property=\"og:description\" content=\"Researchers at Purdue University, West Lafayette, Ind., have created the first modern complementary metal-oxide-semiconductor device in which germanium is the semiconductor instead of silicon.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/23431600\/NEWS\/\" \/>\n<meta property=\"og:site_name\" content=\"Electronic Device Failure Analysis Society\" \/>\n<meta property=\"article:published_time\" content=\"2015-01-17T21:44:03+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2023-02-07T04:53:21+00:00\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/23431600\\\/NEWS\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/23431600\\\/NEWS\\\/\"},\"author\":{\"name\":\"\",\"@id\":\"\"},\"headline\":\"Germanium replaces silicon in CMOS device\",\"datePublished\":\"2015-01-17T21:44:03+00:00\",\"dateModified\":\"2023-02-07T04:53:21+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/23431600\\\/NEWS\\\/\"},\"wordCount\":250,\"publisher\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#organization\"},\"articleSection\":[\"Electronics\",\"general\",\"news\",\"News Articles\"],\"inLanguage\":\"en-US\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/23431600\\\/NEWS\\\/\",\"url\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/23431600\\\/NEWS\\\/\",\"name\":\"Germanium replaces silicon in CMOS device - 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