{"id":5092,"date":"2020-01-18T20:52:44","date_gmt":"2020-01-18T20:52:44","guid":{"rendered":"https:\/\/staging.asminternational.org\/edfas\/picosun-s-ald-technology-enables-3d-silicon-integrated-microcapacitors\/"},"modified":"2023-02-23T21:23:09","modified_gmt":"2023-02-23T21:23:09","slug":"picosun-s-ald-technology-enables-3d-silicon-integrated-microcapacitors","status":"publish","type":"post","link":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/39419524\/NEWS\/","title":{"rendered":"Picosun\u2019s ALD technology enables 3D silicon-integrated microcapacitors"},"content":{"rendered":"<p style=\"margin-bottom:.0001pt\"><span style=\"line-height:normal\">Picosun Group, Espoo, Finland, reports record performance of silicon-integrated, three-dimensional deep trench microcapacitors manufactured by its ALD equipment, which deposited film stacks of conductive TiN and insulating dielectric Al<span style=\"font-size:12px\"><sub>2<\/sub><\/span>O<span style=\"font-size:12px\"><sub>3<\/sub><\/span> and HfAlO<span style=\"font-size:12px\"><sub>3<\/sub><\/span> layers into high aspect-ratio (up to 100) trenches etched into silicon. Up to 1 \u00b5F\/mm<sup>2<\/sup> areal capacitance was achieved, a new record for this capacitor type. <\/span><\/p>\n<p style=\"margin-bottom:.0001pt\">&nbsp;<\/p>\n<p style=\"margin-bottom:.0001pt\"><span style=\"line-height:normal\">Power and energy densities were also excellent at 566 W\/cm<sup><span style=\"font-size:14.0pt\"><span style=\"font-size:11px\">2<\/span> <\/span><\/sup>and 1.7 \u00b5Wh\/cm<span style=\"font-size:11px\"><sup>2<\/sup><\/span>, surpassing the values achieved with most other capacitor technologies. The ALD microcapacitors also showed outstanding voltage and temperature stability, up to 16 V and 100 degrees C, over 100 hours of continuous operation.<\/span><\/p>\n<p style=\"margin-bottom:.0001pt\">&nbsp;<\/p>\n<p style=\"margin-bottom:.0001pt\"><span style=\"line-height:normal\">\u201cWe exploited the room available on the bottom of silicon wafers, of which only a few micrometers of silicon are used for electronic components in integrated circuits, to fabricate silicon-integrated 3D microcapacitors with unprecedented areal capacitance. <\/span><\/p>\n<p style=\"margin-bottom:.0001pt\">&nbsp;<\/p>\n<p style=\"margin-bottom:.0001pt\"><span style=\"line-height:normal\">\u201cThe electrochemical micromachining technology, developed at the University of Pisa over the past decade, enabled etching of high-density trenches with aspect ratios up to 100 in silicon, a value otherwise not achievable with deep reactive ion etching. This became the basis for increasing the areal capacitance of our 3D microcapacitors upon conformal coating with an ALD metal-insulator-metal stack,\u201d says Prof. Giuseppe Barillaro, group leader in the Information Engineering Department at the University of Pisa, Italy.<\/span><\/p>\n<p style=\"margin-bottom:.0001pt\">&nbsp;<\/p>\n<p style=\"margin-bottom:.0001pt\"><span style=\"line-height:normal\"><a href=\"http:\/\/www.picosun.com\/\">www.picosun.co<\/a>m<\/span><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Picosun Group, Espoo, Finland, reports record performance of silicon-integrated, three-dimensional deep trench microcapacitors manufactured by its ALD equipment, which deposited film stacks of conductive TiN and insulating dielectric Al2O3 and HfAlO3 layers into high aspect-ratio (up to 100) trenches etched into silicon.<\/p>\n","protected":false},"author":63103,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[434,438,435,436,1],"tags":[],"class_list":["post-5092","post","type-post","status-publish","format-standard","hentry","category-electronics","category-nanotechnology","category-news","category-news-articles","category-uncategorized"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.9 - 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