Engineers from NXP Semiconductors, Sector Technologies, and Thermo Fisher Scientific, reported that the application of IR-lock-in thermography has been extended from 2D and 3D package fault isolation to on-die level analysis, at the ASM International ISTFA 2019 conference in Portland, Oregon. In addition, the technique has become more sensitive, allowing for detection of much lower dissipated power.<\/p>\n
In this paper, several fault localization cases covering PCB assemblies down to die level analysis were discussed using IR-LIT and absolute temperature mapping. Where possible, the analysis was complemented with physical defect verification. The fault isolation cases include an ultra-low power dissipation (<150 nW) and several case studies with high ohmic connections.<\/p>\n
For the latter, a new method based on phase mapping was discussed, allowing for 2D localization of thermally invisible defects. The method was demonstrated on a test vehicle where phase data extracted from a visible feature of the device under test was studied. After this, a case study at die level was presented in an attempt to distinguish the phase information from two stacked M2-M3 metallization layers of the Back-End Of the Line (BEOL).<\/p>\n
Finally, temperature mapping results of a five-micron-wide aluminum feature in silicon-oxide that was pushing the optical resolution of the tool was presented.<\/p>\n
Infrared Lock-In Thermography: from localization of low power and masked defects to absolute temperature mapping for product debug<\/b><\/p>\n
J. Jalink, A. Firiti, J. Van Den Biggelaar, NXP Semiconductors, The Netherlands;<\/p>\n
A. Reverdy, Sector Technologies, France;<\/p>\n
B. Lai, ThermoFisher Scientific, Fremont, California<\/p>\n
<\/p>\n
<\/p>\n","protected":false},"excerpt":{"rendered":"
Engineers from NXP Semiconductors, Sector Technologies, and Thermo Fisher Scientific, reported that the application of IR-Lock-In Thermography has been extended from 2D and 3D package fault isolation to on-die level analysis, at the ASM International ISTFA 2019 conference in Portland, Oregon.<\/p>\n","protected":false},"author":63103,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[434,438,435,436,1],"tags":[],"class_list":["post-5136","post","type-post","status-publish","format-standard","hentry","category-electronics","category-nanotechnology","category-news","category-news-articles","category-uncategorized"],"yoast_head":"\n