{"id":5684,"date":"2018-06-25T09:40:40","date_gmt":"2018-06-25T09:40:40","guid":{"rendered":"https:\/\/staging.asminternational.org\/edfas\/rohm-and-gan-systems-collaborate-for-r-d-to-improve-gan-power-semiconductors\/"},"modified":"2023-02-23T21:27:01","modified_gmt":"2023-02-23T21:27:01","slug":"rohm-and-gan-systems-collaborate-for-r-d-to-improve-gan-power-semiconductors","status":"publish","type":"post","link":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/34745578\/NEWS\/","title":{"rendered":"Rohm and GaN Systems collaborate for R&D to improve GaN power semiconductors"},"content":{"rendered":"

Rohm Semiconductor, Kyoto, and GaN Systems, Ottawa, announce their collaboration in the GaN (gallium nitride) power semiconductor business, with the goal of contributing to the continuing evolution of power electronics. <\/span><\/span><\/p>\n

This strategic partnership leverages GaN Systems\u2019 industry leading capabilities in power GaN transistors along with Rohm\u2019s comprehensive footprint in semiconductor and considerable resources in the design and manufacture of electronic components. The companies have agreed to jointly develop form-, fit-, and function-compatible products using GaN semiconductor dies in both GaN Systems\u2019 GaNPX packaging, and Rohm\u2019s traditional power semiconductor packaging. <\/span><\/span><\/p>\n

Customers will now have the advantage of having two possible sources for package-compatible GaN power switches, presenting the widest selection of dual-sourced GaN devices. Customers will also benefit from greater access to GaN products and resources globally, especially in Asia, one of the fastest growing market for GaN. In addition, the companies will work together on GaN semiconductor research and development activities to propose ground-breaking solutions for the industrial, automotive, and consumer electronics fields. In addition, to contribute to greater energy savings and increased power densities in the power electronics market, both companies will continue to collaborate to expand their line-up of GaN products and broaden the range of choices.<\/span><\/span><\/p>\n

www.gansystems.com<\/a> <\/span><\/span><\/p>\n

www.rohm.com<\/a> <\/span><\/span><\/p>\n","protected":false},"excerpt":{"rendered":"

Rohm Semiconductor, Kyoto, and GaN Systems, Ottawa, announce their collaboration in the GaN (gallium nitride) power semiconductor business, with the goal of contributing to the continuing evolution of power electronics.<\/p>\n","protected":false},"author":63103,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[443,446,434,435,436,1],"tags":[],"class_list":["post-5684","post","type-post","status-publish","format-standard","hentry","category-automobiles-and-ground-transportation","category-consumer-products","category-electronics","category-news","category-news-articles","category-uncategorized"],"yoast_head":"\nRohm and GaN Systems collaborate for R&D to improve GaN power semiconductors - Electronic Device Failure Analysis Society<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/34745578\/NEWS\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Rohm and GaN Systems collaborate for R&D to improve GaN power semiconductors - Electronic Device Failure Analysis Society\" \/>\n<meta property=\"og:description\" content=\"Rohm Semiconductor, Kyoto, and GaN Systems, Ottawa, announce their collaboration in the GaN (gallium nitride) power semiconductor business, with the goal of contributing to the continuing evolution of power electronics.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/34745578\/NEWS\/\" \/>\n<meta property=\"og:site_name\" content=\"Electronic Device Failure Analysis Society\" \/>\n<meta property=\"article:published_time\" content=\"2018-06-25T09:40:40+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2023-02-23T21:27:01+00:00\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/34745578\\\/NEWS\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/34745578\\\/NEWS\\\/\"},\"author\":{\"name\":\"\",\"@id\":\"\"},\"headline\":\"Rohm and GaN Systems collaborate for R&D to improve GaN power semiconductors\",\"datePublished\":\"2018-06-25T09:40:40+00:00\",\"dateModified\":\"2023-02-23T21:27:01+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/34745578\\\/NEWS\\\/\"},\"wordCount\":223,\"commentCount\":0,\"publisher\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#organization\"},\"articleSection\":[\"Automobiles and Ground Transportation\",\"Consumer Products\",\"Electronics\",\"news\",\"News Articles\"],\"inLanguage\":\"en-US\",\"potentialAction\":[{\"@type\":\"CommentAction\",\"name\":\"Comment\",\"target\":[\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/34745578\\\/NEWS\\\/#respond\"]}]},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/34745578\\\/NEWS\\\/\",\"url\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/34745578\\\/NEWS\\\/\",\"name\":\"Rohm and GaN Systems collaborate for R&D to improve GaN power semiconductors - Electronic Device Failure Analysis Society\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#website\"},\"datePublished\":\"2018-06-25T09:40:40+00:00\",\"dateModified\":\"2023-02-23T21:27:01+00:00\",\"breadcrumb\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/34745578\\\/NEWS\\\/#breadcrumb\"},\"inLanguage\":\"en-US\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/34745578\\\/NEWS\\\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/results\\\/-\\\/journal_content\\\/56\\\/10192\\\/34745578\\\/NEWS\\\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Rohm and GaN Systems collaborate for R&D to improve GaN power semiconductors\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#website\",\"url\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/\",\"name\":\"Electronic Device Failure Analysis Society\",\"description\":\"Electronic Device Failure Analysis Society\",\"publisher\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"en-US\"},{\"@type\":\"Organization\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#organization\",\"name\":\"Electronic Device Failure Analysis Society\",\"url\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"en-US\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#\\\/schema\\\/logo\\\/image\\\/\",\"url\":\"https:\\\/\\\/cdn-prd-main.asm-media.cloud\\\/uploads\\\/sites\\\/41\\\/2022\\\/10\\\/layout_set_logo.png\",\"contentUrl\":\"https:\\\/\\\/cdn-prd-main.asm-media.cloud\\\/uploads\\\/sites\\\/41\\\/2022\\\/10\\\/layout_set_logo.png\",\"width\":360,\"height\":95,\"caption\":\"Electronic Device Failure Analysis Society\"},\"image\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#\\\/schema\\\/logo\\\/image\\\/\"}},{\"@type\":\"Person\",\"@id\":\"\",\"url\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/author\\\/\"}]}<\/script>\n<!-- \/ Yoast SEO plugin. -->","yoast_head_json":{"title":"Rohm and GaN Systems collaborate for R&D to improve GaN power semiconductors - Electronic Device Failure Analysis Society","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/34745578\/NEWS\/","og_locale":"en_US","og_type":"article","og_title":"Rohm and GaN Systems collaborate for R&D to improve GaN power semiconductors - Electronic Device Failure Analysis Society","og_description":"Rohm Semiconductor, Kyoto, and GaN Systems, Ottawa, announce their collaboration in the GaN (gallium nitride) power semiconductor business, with the goal of contributing to the continuing evolution of power electronics.","og_url":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/34745578\/NEWS\/","og_site_name":"Electronic Device Failure Analysis Society","article_published_time":"2018-06-25T09:40:40+00:00","article_modified_time":"2023-02-23T21:27:01+00:00","twitter_card":"summary_large_image","twitter_misc":{"Written by":"","Est. reading time":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/34745578\/NEWS\/#article","isPartOf":{"@id":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/34745578\/NEWS\/"},"author":{"name":"","@id":""},"headline":"Rohm and GaN Systems collaborate for R&D to improve GaN power semiconductors","datePublished":"2018-06-25T09:40:40+00:00","dateModified":"2023-02-23T21:27:01+00:00","mainEntityOfPage":{"@id":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/34745578\/NEWS\/"},"wordCount":223,"commentCount":0,"publisher":{"@id":"https:\/\/www.asminternational.org\/edfas\/#organization"},"articleSection":["Automobiles and Ground Transportation","Consumer Products","Electronics","news","News Articles"],"inLanguage":"en-US","potentialAction":[{"@type":"CommentAction","name":"Comment","target":["https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/34745578\/NEWS\/#respond"]}]},{"@type":"WebPage","@id":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/34745578\/NEWS\/","url":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/34745578\/NEWS\/","name":"Rohm and GaN Systems collaborate for R&D to improve GaN power semiconductors - Electronic Device Failure Analysis Society","isPartOf":{"@id":"https:\/\/www.asminternational.org\/edfas\/#website"},"datePublished":"2018-06-25T09:40:40+00:00","dateModified":"2023-02-23T21:27:01+00:00","breadcrumb":{"@id":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/34745578\/NEWS\/#breadcrumb"},"inLanguage":"en-US","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/34745578\/NEWS\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/34745578\/NEWS\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/www.asminternational.org\/edfas\/"},{"@type":"ListItem","position":2,"name":"Rohm and GaN Systems collaborate for R&D to improve GaN power semiconductors"}]},{"@type":"WebSite","@id":"https:\/\/www.asminternational.org\/edfas\/#website","url":"https:\/\/www.asminternational.org\/edfas\/","name":"Electronic Device Failure Analysis Society","description":"Electronic Device Failure Analysis Society","publisher":{"@id":"https:\/\/www.asminternational.org\/edfas\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.asminternational.org\/edfas\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"en-US"},{"@type":"Organization","@id":"https:\/\/www.asminternational.org\/edfas\/#organization","name":"Electronic Device Failure Analysis Society","url":"https:\/\/www.asminternational.org\/edfas\/","logo":{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/www.asminternational.org\/edfas\/#\/schema\/logo\/image\/","url":"https:\/\/cdn-prd-main.asm-media.cloud\/uploads\/sites\/41\/2022\/10\/layout_set_logo.png","contentUrl":"https:\/\/cdn-prd-main.asm-media.cloud\/uploads\/sites\/41\/2022\/10\/layout_set_logo.png","width":360,"height":95,"caption":"Electronic Device Failure Analysis Society"},"image":{"@id":"https:\/\/www.asminternational.org\/edfas\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"","url":"https:\/\/www.asminternational.org\/edfas\/author\/"}]}},"acf":[],"_links":{"self":[{"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/posts\/5684","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/users\/63103"}],"replies":[{"embeddable":true,"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/comments?post=5684"}],"version-history":[{"count":0,"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/posts\/5684\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/media?parent=5684"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/categories?post=5684"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/tags?post=5684"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}