{"id":5725,"date":"2020-01-12T13:49:49","date_gmt":"2020-01-12T13:49:49","guid":{"rendered":"https:\/\/staging.asminternational.org\/edfas\/johns-hopkins-scientists-develop-process-for-3d-printing-gallium-nitride-semiconductors\/"},"modified":"2023-02-23T21:27:17","modified_gmt":"2023-02-23T21:27:17","slug":"johns-hopkins-scientists-develop-process-for-3d-printing-gallium-nitride-semiconductors","status":"publish","type":"post","link":"https:\/\/www.asminternational.org\/edfas\/results\/-\/journal_content\/56\/10192\/39360816\/NEWS\/","title":{"rendered":"Johns Hopkins scientists develop process for 3D printing gallium nitride semiconductors"},"content":{"rendered":"<p style=\"margin-bottom:.0001pt\"><span style=\"line-height:normal\">Researchers at the Johns Hopkins Applied Physics Laboratory (APL) in Laurel, Md., have demonstrated a novel and groundbreaking way to additively print gallium nitride based on a combination of liquid and gas. Their work was detailed in \u201c<a href=\"https:\/\/www.cambridge.org\/core\/journals\/mrs-communications\/article\/pathway-to-compound-semiconductor-additive-manufacturing\/1C21A7F54DB42077D52572245413365B\" target=\"_blank\" rel=\"noopener\">A pathway to compound semiconductor additive manufacturing<\/a>,\u201d published recently in the journal MRS Communications. <\/span><\/p>\n<p style=\"margin-bottom:.0001pt\">&nbsp;<\/p>\n<p style=\"margin-bottom:.0001pt\"><span style=\"line-height:normal\">\u201cGallium nitride is a material of significant interest for optoelectronic applications, solar power generation, and high power distribution,\u201d says Jarod Gagnon, a materials scientist in APL\u2019s Research and Exploratory Development Department and lead author on the paper. \u201cBeing able to 3D-print semiconductors gives us the ability to make complex devices that are either too costly or too complex to make with current techniques. If we are successful with our research, this will open a new path forward for a rapid change in how we operate in the semiconductor and electronic device field.\u201d<\/span><\/p>\n<p style=\"margin-bottom:.0001pt\">&nbsp;<\/p>\n<p style=\"margin-bottom:.0001pt\"><span style=\"line-height:normal\">GaN printing represents a new category of 3D printing that Dr. Gagnon and his colleagues call \u201cgas-phase reactive AM.\u201d The team combined additive manufacturing techniques \u2014 in this case, material extrusion \u2014 with semiconductor synthesis techniques (liquid phase epitaxy and metalorganic chemical vapor deposition) to react with the material as it is printed. \u201cThis is what allows us to form single-crystal oriented material through epitaxial growth,\u201d he explains.<\/span><\/p>\n<p style=\"margin-bottom:.0001pt\">&nbsp;<\/p>\n<p style=\"margin-bottom:.0001pt\"><span style=\"line-height:normal\">\u201cI approached this problem from a semiconductor viewpoint and realized that we could modify and combine existing processes in both research areas to create something new and effective,\u201d he said. \u201cThat isn\u2019t to say it wasn\u2019t still a difficult challenge. Additive manufacturing processes and semiconductor processes both have a wide number of critical variables that affect the quality of the final product. Now that we\u2019ve proven the viability of our process, we have double the number of variables that interrelate and have to be controlled and understood to demonstrate the ultimate quality and resolution of our process.\u201d<\/span><\/p>\n<p style=\"margin-bottom:.0001pt\">&nbsp;<\/p>\n<p style=\"margin-bottom:.0001pt\"><span style=\"line-height:normal\">The requirements for the process, in terms of controlling impurities and safety, were so novel that the team \u2014 which includes Michael Presley, Nam Le, Timothy Montalbano and Steven Storck \u2014 had to design and build a system that would allow them to perform the research, creating a new capability at APL in the process. The team is now looking for ways to improve resolution and better understand the mechanisms through modeling and experimentation.<\/span><\/p>\n<p style=\"margin-bottom:.0001pt\">&nbsp;<\/p>\n<p style=\"margin-bottom:.0001pt\"><span style=\"line-height:normal\"><a href=\"http:\/\/www.jhuapl.edu\/\">www.jhuapl.ed<\/a>u<\/span><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Researchers at the Johns Hopkins Applied Physics Laboratory (APL) in Laurel, Md., have demonstrated a novel and groundbreaking way to additively print gallium nitride based on a combination of liquid and gas.<\/p>\n","protected":false},"author":63103,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[434,435,436,1],"tags":[],"class_list":["post-5725","post","type-post","status-publish","format-standard","hentry","category-electronics","category-news","category-news-articles","category-uncategorized"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.9 - 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