{"id":7949,"date":"2024-02-16T12:23:30","date_gmt":"2024-02-16T17:23:30","guid":{"rendered":"https:\/\/staging.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/"},"modified":"2024-02-16T17:23:33","modified_gmt":"2024-02-16T17:23:33","slug":"new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting","status":"publish","type":"post","link":"https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/","title":{"rendered":"New candidate for universal memory is fast, low-power, stable and long-lasting"},"content":{"rendered":"<p>Researchers at Stanford University have demonstrated that a new material may make phase-change memory\u2014which relies on switching between high and low resistance states to create the ones and zeroes of computer data\u2014an improved option for future AI and data-centric systems. Their scalable technology, as detailed in <em>Nature Communications<\/em>, is fast, low-power, stable, long-lasting, and can be fabricated at temperatures compatible with commercial manufacturing.<\/p>\n<p>\u201cWe are not just improving on a single metric, such as endurance or speed; we are improving several metrics simultaneously,\u201d said Eric Pop, the Pease-Ye Professor of electrical engineering and professor, by courtesy, of materials science and engineering at Stanford. \u201cThis is the most realistic, industry-friendly thing we&#8217;ve built in this sphere. I&#8217;d like to think of it as a step towards a universal memory.\u201d<\/p>\n<p>We task computers with processing ever-increasing amounts of data to speed up drug discovery, improve weather and climate predictions, train artificial intelligence, and much more. To keep up with this demand, we need faster, more energy-efficient computer memory than ever before.<\/p>\n<p>Today&#8217;s computers store and process data in separate locations. Volatile memory\u2014which is fast but disappears when your computer turns off\u2014handles the processing, while nonvolatile memory\u2014which isn&#8217;t as fast but can hold information without constant power input\u2014takes care of the long-term data storage. Shifting information between these two locations can cause bottlenecks while the processor waits for large amounts of data to be retrieved.<\/p>\n<p>\u201cIt takes a lot of energy to shuttle data back and forth, especially with today&#8217;s computing workloads,\u201d said Xiangjin Wu, co-lead author on the paper and a doctoral candidate. \u201cWith this type of memory, we&#8217;re really hoping to bring the memory and processing closer together, ultimately into one device, so that it uses less energy and time.\u201d<\/p>\n<p>The memory relies on GST467, an alloy of four parts germanium, six parts antimony, and seven parts tellurium, which was developed by collaborators at the University of Maryland. Pop and his colleagues found ways to sandwich the alloy between several other nanometer-thin materials in a superlattice, a layered structure they&#8217;ve previously used to achieve good nonvolatile memory results.<\/p>\n<p>This unique composition of GST467 gives it a particularly fast switching speed. Integrating it within the superlattice structure in nanoscale devices enables low switching energy, gives good endurance, very good stability, and makes it nonvolatile\u2014it can retain its state for 10 years or longer.<\/p>\n<p>There are many technical hurdles to achieving an effective, commercially viable universal memory capable of both long-term storage and fast, low-power processing without sacrificing other metrics, but the new phase change memory developed in Pop&#8217;s lab is as close as anyone has come so far with this technology. The researchers hope that it will inspire further development and adoption as a universal memory.<\/p>\n<p>Image &#8211; <em>Cross-sections of phase-change memory devices in the high- and low-resistance states. The diameter of the bottom electrode is ~40 nanometers. Arrows mark some of the van der Waals (vdW) interfaces which form between layers of the superlattice materials. The superlattice is disrupted and reformed between the high- and low-resistance states. Courtesy of: the Pop Lab.<\/em><\/p>\n<p>&nbsp;<\/p>\n<p>For more information:<\/p>\n<p>Stanford University<\/p>\n<p><a href=\"https:\/\/www.stanford.edu\/\">https:\/\/www.stanford.edu\/<\/a><\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Researchers at Stanford University have demonstrated that a new material may make phase-change memory an improved option for future AI and data-centric systems.<\/p>\n","protected":false},"author":63245,"featured_media":7950,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[499,434,441,486,435,436,611,612,464],"tags":[],"class_list":["post-7949","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-electrical-properties","category-electronics","category-materials-properties-and-performance","category-microstructures","category-news","category-news-articles","category-nonferrous-other","category-nonferrous-alloys","category-research-and-development"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.9 - https:\/\/yoast.com\/product\/yoast-seo-wordpress\/ -->\n<title>New candidate for universal memory is fast, low-power, stable and long-lasting - Electronic Device Failure Analysis Society<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"New candidate for universal memory is fast, low-power, stable and long-lasting - Electronic Device Failure Analysis Society\" \/>\n<meta property=\"og:description\" content=\"Researchers at Stanford University have demonstrated that a new material may make phase-change memory an improved option for future AI and data-centric systems.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/\" \/>\n<meta property=\"og:site_name\" content=\"Electronic Device Failure Analysis Society\" \/>\n<meta property=\"article:published_time\" content=\"2024-02-16T17:23:30+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2024-02-16T17:23:33+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.asminternational.org\/app\/uploads\/sites\/41\/2024\/02\/EDFAS__022224__Stanford__250.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"250\" \/>\n\t<meta property=\"og:image:height\" content=\"103\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Debbie Sniderman\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Debbie Sniderman\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"3 minutes\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\\\/\"},\"author\":{\"name\":\"Debbie Sniderman\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#\\\/schema\\\/person\\\/135b2d8ac98a363d0bd9ec033a2904ad\"},\"headline\":\"New candidate for universal memory is fast, low-power, stable and long-lasting\",\"datePublished\":\"2024-02-16T17:23:30+00:00\",\"dateModified\":\"2024-02-16T17:23:33+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\\\/\"},\"wordCount\":546,\"publisher\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#organization\"},\"image\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/cdn-prd-main.asm-media.cloud\\\/uploads\\\/sites\\\/41\\\/2024\\\/02\\\/EDFAS__022224__Stanford__250.jpg\",\"articleSection\":[\"electrical-properties\",\"Electronics\",\"Materials Properties and Performance\",\"Microstructures\",\"news\",\"News Articles\",\"Nonferrous - other\",\"Nonferrous Alloys\",\"Research and Development\"],\"inLanguage\":\"en-US\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\\\/\",\"url\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\\\/\",\"name\":\"New candidate for universal memory is fast, low-power, stable and long-lasting - Electronic Device Failure Analysis Society\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\\\/#primaryimage\"},\"image\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/cdn-prd-main.asm-media.cloud\\\/uploads\\\/sites\\\/41\\\/2024\\\/02\\\/EDFAS__022224__Stanford__250.jpg\",\"datePublished\":\"2024-02-16T17:23:30+00:00\",\"dateModified\":\"2024-02-16T17:23:33+00:00\",\"breadcrumb\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\\\/#breadcrumb\"},\"inLanguage\":\"en-US\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\\\/\"]}]},{\"@type\":\"ImageObject\",\"inLanguage\":\"en-US\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\\\/#primaryimage\",\"url\":\"https:\\\/\\\/cdn-prd-main.asm-media.cloud\\\/uploads\\\/sites\\\/41\\\/2024\\\/02\\\/EDFAS__022224__Stanford__250.jpg\",\"contentUrl\":\"https:\\\/\\\/cdn-prd-main.asm-media.cloud\\\/uploads\\\/sites\\\/41\\\/2024\\\/02\\\/EDFAS__022224__Stanford__250.jpg\",\"width\":250,\"height\":103},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\\\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"New candidate for universal memory is fast, low-power, stable and long-lasting\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#website\",\"url\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/\",\"name\":\"Electronic Device Failure Analysis Society\",\"description\":\"Electronic Device Failure Analysis Society\",\"publisher\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"en-US\"},{\"@type\":\"Organization\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#organization\",\"name\":\"Electronic Device Failure Analysis Society\",\"url\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"en-US\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#\\\/schema\\\/logo\\\/image\\\/\",\"url\":\"https:\\\/\\\/cdn-prd-main.asm-media.cloud\\\/uploads\\\/sites\\\/41\\\/2022\\\/10\\\/layout_set_logo.png\",\"contentUrl\":\"https:\\\/\\\/cdn-prd-main.asm-media.cloud\\\/uploads\\\/sites\\\/41\\\/2022\\\/10\\\/layout_set_logo.png\",\"width\":360,\"height\":95,\"caption\":\"Electronic Device Failure Analysis Society\"},\"image\":{\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#\\\/schema\\\/logo\\\/image\\\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/#\\\/schema\\\/person\\\/135b2d8ac98a363d0bd9ec033a2904ad\",\"name\":\"Debbie Sniderman\",\"url\":\"https:\\\/\\\/www.asminternational.org\\\/edfas\\\/author\\\/dsniderman\\\/\"}]}<\/script>\n<!-- \/ Yoast SEO plugin. -->","yoast_head_json":{"title":"New candidate for universal memory is fast, low-power, stable and long-lasting - Electronic Device Failure Analysis Society","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/","og_locale":"en_US","og_type":"article","og_title":"New candidate for universal memory is fast, low-power, stable and long-lasting - Electronic Device Failure Analysis Society","og_description":"Researchers at Stanford University have demonstrated that a new material may make phase-change memory an improved option for future AI and data-centric systems.","og_url":"https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/","og_site_name":"Electronic Device Failure Analysis Society","article_published_time":"2024-02-16T17:23:30+00:00","article_modified_time":"2024-02-16T17:23:33+00:00","og_image":[{"width":250,"height":103,"url":"https:\/\/www.asminternational.org\/app\/uploads\/sites\/41\/2024\/02\/EDFAS__022224__Stanford__250.jpg","type":"image\/jpeg"}],"author":"Debbie Sniderman","twitter_card":"summary_large_image","twitter_misc":{"Written by":"Debbie Sniderman","Est. reading time":"3 minutes"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/#article","isPartOf":{"@id":"https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/"},"author":{"name":"Debbie Sniderman","@id":"https:\/\/www.asminternational.org\/edfas\/#\/schema\/person\/135b2d8ac98a363d0bd9ec033a2904ad"},"headline":"New candidate for universal memory is fast, low-power, stable and long-lasting","datePublished":"2024-02-16T17:23:30+00:00","dateModified":"2024-02-16T17:23:33+00:00","mainEntityOfPage":{"@id":"https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/"},"wordCount":546,"publisher":{"@id":"https:\/\/www.asminternational.org\/edfas\/#organization"},"image":{"@id":"https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/#primaryimage"},"thumbnailUrl":"https:\/\/cdn-prd-main.asm-media.cloud\/uploads\/sites\/41\/2024\/02\/EDFAS__022224__Stanford__250.jpg","articleSection":["electrical-properties","Electronics","Materials Properties and Performance","Microstructures","news","News Articles","Nonferrous - other","Nonferrous Alloys","Research and Development"],"inLanguage":"en-US"},{"@type":"WebPage","@id":"https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/","url":"https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/","name":"New candidate for universal memory is fast, low-power, stable and long-lasting - Electronic Device Failure Analysis Society","isPartOf":{"@id":"https:\/\/www.asminternational.org\/edfas\/#website"},"primaryImageOfPage":{"@id":"https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/#primaryimage"},"image":{"@id":"https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/#primaryimage"},"thumbnailUrl":"https:\/\/cdn-prd-main.asm-media.cloud\/uploads\/sites\/41\/2024\/02\/EDFAS__022224__Stanford__250.jpg","datePublished":"2024-02-16T17:23:30+00:00","dateModified":"2024-02-16T17:23:33+00:00","breadcrumb":{"@id":"https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/#breadcrumb"},"inLanguage":"en-US","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/"]}]},{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/#primaryimage","url":"https:\/\/cdn-prd-main.asm-media.cloud\/uploads\/sites\/41\/2024\/02\/EDFAS__022224__Stanford__250.jpg","contentUrl":"https:\/\/cdn-prd-main.asm-media.cloud\/uploads\/sites\/41\/2024\/02\/EDFAS__022224__Stanford__250.jpg","width":250,"height":103},{"@type":"BreadcrumbList","@id":"https:\/\/www.asminternational.org\/edfas\/new-candidate-for-universal-memory-is-fast-low-power-stable-and-long-lasting\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/www.asminternational.org\/edfas\/"},{"@type":"ListItem","position":2,"name":"New candidate for universal memory is fast, low-power, stable and long-lasting"}]},{"@type":"WebSite","@id":"https:\/\/www.asminternational.org\/edfas\/#website","url":"https:\/\/www.asminternational.org\/edfas\/","name":"Electronic Device Failure Analysis Society","description":"Electronic Device Failure Analysis Society","publisher":{"@id":"https:\/\/www.asminternational.org\/edfas\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.asminternational.org\/edfas\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"en-US"},{"@type":"Organization","@id":"https:\/\/www.asminternational.org\/edfas\/#organization","name":"Electronic Device Failure Analysis Society","url":"https:\/\/www.asminternational.org\/edfas\/","logo":{"@type":"ImageObject","inLanguage":"en-US","@id":"https:\/\/www.asminternational.org\/edfas\/#\/schema\/logo\/image\/","url":"https:\/\/cdn-prd-main.asm-media.cloud\/uploads\/sites\/41\/2022\/10\/layout_set_logo.png","contentUrl":"https:\/\/cdn-prd-main.asm-media.cloud\/uploads\/sites\/41\/2022\/10\/layout_set_logo.png","width":360,"height":95,"caption":"Electronic Device Failure Analysis Society"},"image":{"@id":"https:\/\/www.asminternational.org\/edfas\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.asminternational.org\/edfas\/#\/schema\/person\/135b2d8ac98a363d0bd9ec033a2904ad","name":"Debbie Sniderman","url":"https:\/\/www.asminternational.org\/edfas\/author\/dsniderman\/"}]}},"acf":[],"_links":{"self":[{"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/posts\/7949","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/users\/63245"}],"replies":[{"embeddable":true,"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/comments?post=7949"}],"version-history":[{"count":0,"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/posts\/7949\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/media\/7950"}],"wp:attachment":[{"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/media?parent=7949"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/categories?post=7949"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.asminternational.org\/edfas\/wp-json\/wp\/v2\/tags?post=7949"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}