Texas Tech University\u2019s Edward E. Whitacre Jr. College of Engineering, Lubbock, Texas, will earn $14 million from the U.S. Department of Defense (DoD) Army Research Laboratory for an Advanced Semiconductor Power Devices Program that will develop reliable, high-performance and power electronic devices with wide and ultrawide bandgap semiconductors.<\/p>\n
High-electron-mobility transistors, metal-semiconductor field-effect transistors and broadband high-efficiency power amplifiers are among the key components to be designed and fabricated. These devices will enable improvements in high-power systems for defense, radar and communication applications \u2013 strengthening technological capabilities, fostering innovation in semiconductor materials and supporting national security in harsh environments.<\/p>\n
In addition, the devices will have industrial applications such as controlling and converting large amounts of electrical energy. This efficiency will promote overall process productivity through precise and reliable operation of machinery with reduced energy consumption. This could impact motor drives for manufacturing, power supplies for heavy equipment, switchgear in electrical grids and industrial heating systems.<\/p>\n
\u201cThe Advanced Power Semiconductor Devices grant marks a significant milestone for Texas Tech University, positioning us at the forefront of innovative research in high-power semiconductor technology,\u201d said Hieu Nguyen, associate professor of electrical and computer engineering (ECE). \u201cUltimately, our work aims to enhance national security and drive technological innovation, benefiting Texas, the nation and the global community.\u201d<\/p>\n
The researchers will conduct comprehensive performance evaluations across various applications, including high-power\/high-voltage systems, electronic warfare, surveillance, radar, multifunctional radio frequency communications, sensing, and power electronics for harsh environments. They will emphasize device packaging, failure analysis, heat dissipation and thermal management to ensure robustness and longevity. Additionally, the project will analyze the structure and other qualities of wide and ultrawide bandgap semiconductors, correlating gained insights with experimental results to inform future innovations.<\/p>\n
\u201cThis program will not only advance cutting-edge materials and device design but also foster interdisciplinary collaboration and educational opportunities for our students,\u201d Nguyen said. \u201cThey will gain experience in the device design\/simulation, epitaxial growth techniques, device fabrication and characterization of semiconductor power devices.\u201d<\/p>\n
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