{"id":9135,"date":"2026-01-15T21:49:18","date_gmt":"2026-01-16T02:49:18","guid":{"rendered":"https:\/\/staging.asminternational.org\/edfas\/ferroelectric-materials-boost-data-storage-potential\/"},"modified":"2026-01-16T02:49:19","modified_gmt":"2026-01-16T02:49:19","slug":"ferroelectric-materials-boost-data-storage-potential","status":"publish","type":"post","link":"https:\/\/www.asminternational.org\/edfas\/ferroelectric-materials-boost-data-storage-potential\/","title":{"rendered":"Ferroelectric materials boost data storage potential"},"content":{"rendered":"

Researchers at Oak Ridge National Laboratory, Oak Ridge, Tenn., used specialized tools to study materials at the atomic scale and analyze defects at the materials\u2019 surface. The results of their research help to better understand these materials used for advance electronics, enabling innovative data storage and computation methods.<\/p>\n

The team modified a commercial atomic force microscope with artificial intelligence to precisely assemble and detect patterns in bismuth ferrite. This method avoids invasive electrode deposition, which complicates the process and restricts how small the structures can be.<\/p>\n

\u201cWe can use the atomic force microscopy tip to align the electric polarization at the nanoscale, so we can write, read, and erase these patterns \u2014 known as topological structures \u2014 on demand,\u201d said Marti Checa, the study\u2019s leader.
\nPublished in ACS Nano, this proof-of-concept highlights how multistate information manipulation boosts information storage potential. Building on ORNL\u2019s work in nanoscale materials, this research aligns with ongoing innovations enhancing memory technologies.<\/p>\n

 <\/p>\n

Image \u2013 An atomic force microscope tip writes data in stable ferroelectric structures, enabling reliable multistate storage at extremely small scales. Courtesy of: Morgan Manning\/ORNL, U.S. Dept. of Energy.<\/em><\/p>\n

For more information:
\nOak Ridge National Laboratory
\nhttps:\/\/www.ornl.gov\/<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

Researchers at Oak Ridge National Laboratory, Oak Ridge, Tenn., modified a commercial atomic force microscope with artificial intelligence to assemble and detect patterns in bismuth ferrite and analyze defects at the materials\u2019 surface, advancing the understanding of these materials and enabling innovative data storage and computation methods. <\/p>\n","protected":false},"author":63245,"featured_media":9136,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[434,460,517,438,435,436,618],"tags":[],"class_list":["post-9135","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-electronics","category-failure-analysis","category-microelectronic-failure-analysis","category-nanotechnology","category-news","category-news-articles","category-nondestructive-testing"],"yoast_head":"\nFerroelectric materials boost data storage potential - Electronic Device Failure Analysis Society<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.asminternational.org\/edfas\/ferroelectric-materials-boost-data-storage-potential\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Ferroelectric materials boost data storage potential - 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