{"id":9140,"date":"2026-01-15T22:06:36","date_gmt":"2026-01-16T03:06:36","guid":{"rendered":"https:\/\/staging.asminternational.org\/edfas\/new-nanoprobing-platform-for-high-voltage-applications\/"},"modified":"2026-01-16T03:06:37","modified_gmt":"2026-01-16T03:06:37","slug":"new-nanoprobing-platform-for-high-voltage-applications","status":"publish","type":"post","link":"https:\/\/www.asminternational.org\/edfas\/new-nanoprobing-platform-for-high-voltage-applications\/","title":{"rendered":"New nanoprobing\u202fplatform for high voltage applications"},"content":{"rendered":"<p>Imina Technologies SA, Switzerland, released a new Nanoprobing High-Voltage Platform designed to safely apply voltages up to 1 kV through both nanoprobing tips and the backside of the sample. The new platform addresses the growing need for reliable electrical characterization of wide-bandgap and high-power semiconductor devices such as SiC- and GaN-based MOSFETs, IGBTs, and other devices.<\/p>\n<p>The Nanoprobing High-Voltage Platform enables precise IV measurements, breakdown, and leakage current characterization inside electron microscopes, FIBs, or dual-beam systems. The solution relies on NANO+ piezo-driven probers for fast and safe landing. NANO+ probers ensure excellent electrical contact while minimizing the risk of pad damage. The probers can be freely repositioned around the sample with nanometer resolution over centimeter-scale travel, providing flexibility for various experimental needs.<\/p>\n<p>The platform is fully integrated with IMINA\u2019s Precisio software suite, which walks users through every step, from initial setup and measurement to data analysis and report generation, ensuring experiments are both efficient and reproducible.<\/p>\n<p>For more information:<br \/>\nImina Technologies SA<br \/>\n<a href=\"https:\/\/imina.ch\/en\/\">https:\/\/imina.ch\/en\/<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Imina Technologies SA, Switzerland, released a new Nanoprobing High-Voltage Platform designed to safely apply voltages up to 1 kV through both nanoprobing tips and the backside of the sample, addressing the growing need for reliable electrical characterization of wide-bandgap and high-power semiconductor devices such as SiC- and GaN-based MOSFETs, IGBTs, and other devices.<\/p>\n","protected":false},"author":63245,"featured_media":9141,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[434,501,460,510,606,435,436,695],"tags":[],"class_list":["post-9140","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-electronics","category-electronics-and-microelectronics","category-failure-analysis","category-materials-characterization","category-mechanical-probing","category-news","category-news-articles","category-nonmechanical-probing"],"yoast_head":"<!-- This site is optimized with the Yoast SEO plugin v27.9 - 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