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Rigaku and Fraunhofer partner to expand x-ray topography for semiconductor wafers
February 19, 2019
Source: ASM International
Rigaku Europe SE and Fraunhofer IISB, both in Germany, announce the formation of a strategic partnership to revolutionize the characterization of semiconductor materials by x-ray topography. Therefore, Rigaku has installed the latest generation x-ray topography tool, the Rigaku XRTmicron imaging system, at Fraunhofer IISB.
The XRTmicron system enables investigation of crystallographic defects with high speed and highest resolution on full wafer scale. It is well suited for bare wafers, wafers with epilayer structures, partially processed wafers, and bonded wafers. The amount and different types of dislocations, slip lines, dislocation networks, (small angle) grain boundaries, inclusions, precipitates, pits, scratches, stress level, etc. can be imaged and quantified on the samples.
Two different x-ray sources – a 40kV/30mA copper source and a 50kV/24 mA molybdenum source in combination with the application of a large angle goniometer accommodate a wide range of diffraction conditions. Therefore, the XRTmicron system can be applied to different kinds of materials, including semiconductors (e.g., Si, Ge, Diamond, SiC, GaN, AlN, GaAs, InP, CdTe, CdZnTe), oxides (e.g., sapphire, ruby, garnets, vanadates, niobates, quartz), and halides (e.g., fluorides, bromides).
The XRTmicron system can be operated in transmission as well as in reflection mode in order to detect defects in the volume of the sample or to quantify defects close to the surface. Furthermore, it is equipped with a standard and a high resolution XTOP CCD-camera. This leads to a spatial resolution of 5.4 µm and 2.4 µm per pixel, respectively, for a single image size of 18 mm x 13.5 mm. Full wafer mappings and detailed defect imaging of regions of interest are possible under different diffraction conditions for sample sizes of up to 300 mm in diameter. A measurement of a full 150 mm SiC wafer under the high resolution mode, for example, takes only one hour.
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