Macom Technology Solutions Inc., Lowell, Mass., reports that it has shipped more than one million GaN-on-Silicon (GaN on Si) RF power devices to date for communications, military, and other RF applications. Macom says its technology brings together the best features of GaN-on-silicon carbide and LDMOS in a low-cost and scalable manufacturing flow.
This milestone in the market adoption of this high-performance technology comes as GaN on Si is being used in applications such as magnetron replacements, automotive ignition systems, high bay lighting, and wireless charging. It is said to demonstrate clear field-proven reliability and ruggedness in demanding applications such as aerospace and defense, as well as civil and commercial communications.
“Macom’s GaN IP portfolio and strategic licensing agreements have set the foundation for a sustainable, cost-efficient technology we believe can enable GaN production at unprecedented economies of scale,” said Michael Ziehl, VP of Marketing, RF & Microwave. “Building on this milestone, we expect to see ramping commercial adoption of our GaN technology in other RF applications in the future, including 4G/LTE base stations and RF Energy applications.”
