New material shows promise for next-generation memory technology

Researchers from Tohoku University, Japan, used sputtering to fabricate large-area 2D vdW tetra-chalcogenides and identified an exceptionally promising material ー niobium telluride ーthat exhibits an ultra-low melting point, opening up new possibilities for developing high-performance phase change memories.

New material could hold key to reducing energy consumption in computers and electronics

A University of Minnesota team has, for the first time, synthesized a thin film of a unique topological semimetal material that has the potential to generate more computing power and memory storage while using significantly less energy. The researchers were also able to closely study the material, leading to some important findings about the physics behind its unique properties.