A team of researchers at the University of Illinois at Urbana-Champaign has advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device.
Purdue University, West Lafayette, Ind., reports that its researchers have demonstrated the high-performance potential of an experimental transistor made of beta gallium oxide, which could bring new ultra-efficient switches for applications such as the power grid, military ships, and aircraft.
Imec, Belgium, and EV Group, Tempe, Ariz., announce an extension to their successful collaboration, achieving excellent wafer-to-wafer overlay accuracy results in both hybrid bonding and dielectric bonding.
MTI Instruments, Albany, N.Y., introduces the MTII/Fullam SEMtester compact mechanical test system, which is specifically designed to fit inside scanning electron microscopes.
Malvern Instruments, England, and Panalytical, The Netherlands, announce that on January 1 they merged their activities to grow the materials characterization business within the Materials Analysis segment of parent company Spectris.
