Oxford Instruments, UK, who recently launched its SiC substrate contactless plasma polishing solution to supersede the established chemical mechanical planarization process with a clean, dry, lower cost, higher yield, and sustainable alternative, announced it qualified whole wafer 1200V MOSFET devices with the process collaborating with Clas-SiC, further boosting confidence in the new solution and its impact on SiC power semiconductor devices.
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The phenomenon in question is called anelasticity. It relates to how materials react to stresses over time. When the materials studied in this paper were bent, tiny defects moved slowly in response to the stress gradient. When the stress is released, the tiny defects slowly return to their initial positions, resulting in the anelastic behavior.





