Researchers from the University of California, Santa Barbara (UCSB), report that they have developed the highest-performing III-V metal-oxide semiconductor (MOS) field-effect transistors.
Fab equipment spending to increase by 24% in 2014
Infrared-based troubleshooting system detects temperature distribution over a circuit board
Cadence and Intel collaborate on 14nm Tri-gate design platform for Intel Custom Foundry
Cadence Design Systems Inc., San Jose, Calif., and Intel Corp., Santa Clara, Calif., announce that they are collaborating to support Intel’s 14nm Tri-Gate process technology for customers of Intel Custom Foundry, which has developed an extensive design platform on Intel’s 22nm and 14nm Tri-gate process technology.
Evolution of the bicycle in 60 seconds
A 1 min animation of the bicycle’s evolution, all the way from the wooden horse to the modern racer.





