Bruker AXS, Billerica, Mass., introduces the D8 Advance Plus as the newest member of the D8 Advance family of X-ray diffraction (XRD) solutions.
Bruker XRD instrument designed to analyze epitaxial/polycrystalline thin films
Silicon-passivated germanium nMOS gate stack has reduced interface defect density
Imec, Belgium, has shown for the first time that a silicon-passivated germanium nMOS gate stack with reduced interface defect density reaches the same defect level as a silicon gate stack, and has high mobility with reduced positive bias temperature instability.
New method allows study of individual defects in transistors
University of Twente, Netherlands, reports that scientists from its MESA+ research institute have developed a method for studying individual defects in transistors.
Global Wafers acquires SunEdison for its product development capabilities
Global Wafers Co. Ltd., Taiwan, announces that its acquisition of SunEdison Semiconductor, St. Peters, Mo., has been successfully completed.
Lincoln Lab wins Herschel Award for digital-pixel readout integrated circuits
The Massachusetts Institute of Technology, Cambridge, announces that the MIT Lincoln Laboratory was presented with the Herschel Award at the recent 2016 Military Sensing Symposia Detectors and Materials Conference for its development of digital-pixel readout integrated circuits.