The U.S. Defense Logistics Agency is requesting assistance on identifying materials critical to military and essential civilian needs. To ensure consideration of all materials important to the U.S. Department of Defense, the agency is seeking survey responses to be received before the end of July from organizations and experts who are concerned with availability of critical materials.
MGI Webinars
NIST is hosting the following webinars to report on the recent Materials Genome Initiative Grand Challenges Summit and to solicit feedback from interested parties. The Summit had break-out sessions on five materials technology areas and is conducting a one-hour webinar for each. They anticipate 20 minutes for the break-out chairs to report the findings of the Summit, followed but a 15 minute feedback session where attendees can offer comments and ask questions. Email the links below to sign up.
2013 ITA Titanium Applications Development Award
Stanley Abkowitz, founder, president, and CEO of Dynamet Technology Inc., Burlington, Mass., will accept the International Titanium Association’s (ITA) 2013 Titanium Applications Development Award at the TITANIUM 2013 conference, held Oct. 6-9 at Caesar’s Palace, Las Vegas. Dynamet has pioneered the development and application of titanium powder metal (PM Ti) technology for four decades.
Ultra-short laser deposition for thinner precious metal thin films
Picodeon Ltd., li, Finland, developed ColdAb ultra-short pulsed laser deposition technology (US PLD) for use in the application of gold and platinum thin films, enabling thinner films and thereby reducing precious metal costs. Precious metals like gold and platinum are finding more and more industrial applications in memory storage, energy harvesting, energy storage, and microelectromechanical systems (MEMS) applications.
Azzurro sets volume production for GaN-on-Si high-voltage wafers
Azzurro Semiconductors, Germany, has successfully achieved superior electrical performance and established a volume production track record for large size high-voltage GaN-on-Si high-voltage wafers. Unlike silicon, which has inherent limitations for fast switching at high voltage, GaN can meet these performance requirements with its excellent breakdown voltage and low leakage characteristics. At present, the availability in the industry is still limited for production-suitable 6 in.