A joint research team at the Korea Advanced Institute of Science and Technology and IBM T. J. Watson Research Center, Yorktown Heights, N.Y., has developed a new analysis method that can detect “hidden defects” in semiconductors, electronic traps that interfere with electrical flow, with approximately 1,000 times higher sensitivity than existing techniques.
Researchers from the Institute of Metal Research of the Chinese Academy of Sciences have developed an innovative flexible sensor that can simultaneously detect strain, strain rate, and temperature using a single active material layer, representing a significant advance in multimodal sensing technology.
Imina Technologies SA, Switzerland, released a new Nanoprobing High-Voltage Platform designed to safely apply voltages up to 1 kV through both nanoprobing tips and the backside of the sample, addressing the growing need for reliable electrical characterization of wide-bandgap and high-power semiconductor devices such as SiC- and GaN-based MOSFETs, IGBTs, and other devices.
Oxford Instruments, UK, has been awarded a prestigious Institute of Physics Business Innovation Award for the development of BEX, a breakthrough analytical technique in scanning electron microscopes, enabling new capabilities and accelerating time to results by at least an order of magnitude.
Researchers at Oak Ridge National Laboratory, Oak Ridge, Tenn., modified a commercial atomic force microscope with artificial intelligence to assemble and detect patterns in bismuth ferrite and analyze defects at the materials’ surface, advancing the understanding of these materials and enabling innovative data storage and computation methods.
