Researchers at Purdue University, West Lafayette, Ind., have created the first modern complementary metal-oxide-semiconductor device in which germanium is the semiconductor instead of silicon.
Germanium replaces silicon in CMOS device
ESI laser drilling tool designed for semiconductor substrate fabrication
Electro Scientific Industries Inc., Portland, Ore., introduces the CornerStone ICP Series 1 UV laser drilling system designed initially for integrated circuit packaging applications.
Auto show features 3D-printed muscle car
With a 3D printed twist on an automotive icon, the Department of Energy’s Oak Ridge National Laboratory, Tenn., showcased additive manufacturing research at the 2015 North American International Auto Show in Detroit.
Multiferroic materials and devices integrated with silicon chips
A research team led by North Carolina State University, Raleigh, made two advances in multiferroic materials, including the ability to integrate them on a silicon chip, which will allow the development of new electronic memory devices.
Reducing the cost and environmental impact of liquid lasers
A new material presents efficient and degradation-resistant laser emission in the blue, a spectral region of interest in applications such as spectroscopy or materials processing, among others.