Research brings new control over topological insulator

An international team of scientists investigating the electronic properties of ultra-thin films of new materials – topological insulators (TIs) – has demonstrated a new method to tune their unique properties using strain (“Tuning Dirac states by strain in the topological insulator Bi2Se3”).

Three-dimensional SEM metrology for 10 nm structures

Researchers at the National Institute of Standards and Technology’s (NIST) Physical Measurement Laboratory (PML), Gaithersburg, Md., have devised an idea for determining the 3D shape of features as small as 10 nm wide.