The National Institute for Materials Science, Japan, reports that engineers have developed room-temperature-printed electronics, by which electronic devices can be manufactured at room temperature under ambient atmospheric conditions.
Cadence and Intel collaborate to support 14nm Tri-Gate design platform
Infinity AFM from Asylum Research enables simpler tapping-mode imaging with less noise
SUSS MicroTec qualifies its new-generation projection lithography system
High-performance MoS2 FETs made via unique doping process
Semiconductor Research Corp., Research Triangle Park, N.C., reports that a team of researchers from Purdue University, Lafayette, Ind.; SEMATECH, Albany, N.Y.; and SUNY College of Nanoscale Science and Engineering, Albany, N.Y., are working on high-performance molybdenum disulfide field-effect transistors.






