Oxford Instruments, Santa Barbara, Calif., announces that electrochemistry capabilities are now available on the Cypher ES atomic force microscope, the highest resolution, fast scanning AFM with environmental control.
Amkor Technology Inc., Tempe, Ariz., announces completion of product qualification for its innovative silicon wafer integrated fan-out technology, which is designed to handle the demanding requirements of today’s advanced mobile, networking, and system-in-package applications.
Bruker AXS, Billerica, Mass., introduces the D8 Advance Plus as the newest member of the D8 Advance family of X-ray diffraction (XRD) solutions.
Imec, Belgium, has shown for the first time that a silicon-passivated germanium nMOS gate stack with reduced interface defect density reaches the same defect level as a silicon gate stack, and has high mobility with reduced positive bias temperature instability.
University of Twente, Netherlands, reports that scientists from its MESA+ research institute have developed a method for studying individual defects in transistors.
