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Interpretation of Power DMOS Transistor Characteristics Measured With Curve Tracer

Author: Hubert Beermann, Infineon Technologies AG   |   Document Download   |   Product code: ZMEFA2011P209

File size: 2 MB

Classified as: Electronic Materials Electronics

Price: $25.00 Member Price: $20.00
For the investigation of discrete DMOS power transistors (Double-Diffused Metal-Oxide- Semiconductor) Curve Tracer (CTR) measurement can give a quick overview of their electrical behavior. At a glance, it can be seen if the chip type inside matches the printing on the package by comparing the device under test (DUT) with a reference. Different failure characteristics deliver first hints on the nature of the defect e. g. which components of the device are involved and how they are affected (short, leakage or threshold voltage shift). Typical characteristics between gate, source, and drain are discussed and how they are related to principle defect locations or to the nature of defects.
  • From: Microelectronics Failure Analysis, Desk Reference Sixth Edition
  • Published: October 01, 2011
  • Pages: 9
  • Review Type: Peer reviewed