Oxford Instruments Asylum Research, Santa Barbara, Calif., announces the new MFP-3D Infinity Atomic Force Microscope, which enables images such as the silicon nitride shown.

SUSS MicroTec, Germany, has successfully qualified its new DSC300 Gen2 projection lithography system for volume production at a major Asian packaging house.

Semiconductor Research Corp., Research Triangle Park, N.C., reports that a team of researchers from Purdue University, Lafayette, Ind.; SEMATECH, Albany, N.Y.; and SUNY College of Nanoscale Science and Engineering, Albany, N.Y., are working on high-performance molybdenum disulfide field-effect transistors.

Entegris Inc., Billerica, Mass., has inaugurated its new i2M Center for Advanced Materials Science in Bedford, Mass.

Engineering researchers at the University of Arkansas, Fayetteville, have designed integrated circuits on silicon–carbide wafers that can survive at temperatures greater than 660°F (350°C).

Lasertec Corp., San Jose, Calif., introduces MAGICS series M8350/M8351, a new line of mask blank inspection systems that meet the requirement of next-generation semiconductor photomasks at the technology nodes of 14nm through 7nm.

Researchers from the University of California, Santa Barbara (UCSB), report that they have developed the highest-performing III-V metal-oxide semiconductor (MOS) field-effect transistors.

Semiconductor Equipment Manufacturing Industries (SEMI), San Jose, Calif., reports that after two years of decline, fab equipment spending for Front End facilities in 2014 is expected to increase by 24% in 2014 (US$35.7 billion).