Applied Materials Inc., Santa Clara, Calif., announces that it collaborated with Samsung Electronics Co. Ltd. and Korea’s PSK Inc. to develop an advanced patterning solution for the manufacture of future generations of NAND and DRAM device designs. The new solution consists of the unique Saphira APF hardmask deposited on the Applied Producer XP Precision CVD system, and the Saphira removal process supported on the PSK Omnis Asher tool. This comprehensive solution represents a breakthrough in precision materials engineering for complex patterning applications.
The Saphira APF deposition and PSK OMNIS Asher systems resolve major issues to improve patterning of more complex device structures at advanced technology nodes. For emerging high-aspect-ratio and dense patterning requirements, the Saphira APF process introduces new film properties that include greater selectivity and transparency.
The high-productivity PSK Omnis Asher system is capable of completely removing the Saphira hardmask layer while preserving the patterned shapes and underlying materials. Together, these leading-edge processes have demonstrated the capabilities to meet the patterning demands of next-generation devices.
Applied has exclusively licensed its proprietary removal process for the Saphira APF hardmask to PSK.
