Samsung Electronics Co. Ltd., Japan, is now mass-producing 4-gigabit (Gb) advanced DDR4 memory, for enterprise servers in next-generation data centers. Early market availability of the devices, which use 20 nm-class process technology, will facilitate demand for 16- and 32-gigabyte memory modules. This compares to conventional DRAM of which 8 gigabyte modules using a 30nm-class process technology are still commonplace.
In next-generation enterprise servers, the use of higher speed DRAM raises system level performance and lowers overall power consumption significantly. By adopting DDR4 memory technology early, OEMs can minimize operational costs and maximize performance to provide more favorable returns on investments.
Production of Samsung’s 20nm-class 4Gb DDR4 follows the introduction of 50nm-class 2Gb DDR3 in 2008, culminating in a full-fledged transition to DDR4 for large-scale data centers and other enterprise applications in just five years. The 4Gb-based DDR4 has the fastest DRAM data transmission rate of 2,667 megabits per second – a 1.25-fold increase over 20nm-class DDR3, while lowering power consumption by more than 30%.
Based on Samsung’s 20nm-class DRAM, the world’s highest performing and smallest 4Gb DRAM chip, the company has now developed the industry’s largest lineup of products tailored to applications from servers to mobile devices. This will provide global customers with the widest range of highly advanced low-power, high-performance green memory solutions.
