Oxford Instruments, U.K., has launched X-Max Extreme, a silicon drift detector for ultrahigh resolution FEG and FIB-SEM applications. It is a windowless 100 mm2 version of X-Max designed to maximize sensitivity and spatial resolution. It is based on a radical geometry to optimize both imaging and EDS performance in ultrahigh resolution FEG-SEMs while working at low kV and short working distance.
This unique detector for the first time enables EDS data collection at very low kV (between 1 and 3 kV) and a very short working distance to provide elemental analysis under the same conditions as those for analyzing nano-materials and surfaces at the highest SEM resolution.
The latest ultra-high resolution FEG-SEMs offer new capabilities for investigating smaller nano-structures, interfaces, and surfaces. However, under the operating conditions needed to make use of new electron signal contrasts from in-lens detectors (very short working distance, very low kV, and minimal beam current ) no traditional SDD could provide supporting elemental characterization. The new X-Max Extreme changes this. With X-Max Extreme, both imaging and EDS performance can be carried out simultaneously, and the EDS resolution approaches that of the SEM.
X-Max Extreme is based on a windowless 100 mm2 detector; its radical geometry enables data acquisition under short working distance. It therefore provides elemental analysis under the same conditions for analysis of nano-materials and surfaces at the highest SEM resolution.
According to X-ray Business Manager, Dr. Simon Burgess, “X-Max delivers solutions beyond conventional micro- and nano-analysis. For example, the sensitivity of the Extreme allows users to characterize the composition and distribution of surface contaminants and layers a few atoms thick. It also provides superb detection of light elements, including lithium.”
www.oxford-instruments.com
