Oxford Instruments, Concord, Mass., announces that it has developed a silicon carbide via plasma etch process based on its PlasmaPro100 Polaris etch system. Silicon carbide is becoming an increasingly important material, particularly in the arena of high performance gallium nitride RF devices in which SiC is the substrate.
A smooth via etch through the silicon carbide is essential to enable these devices, and Oxford Instruments has developed the ideal solution for etching high quality SiC vias efficiently. Combined with a low-damage gallium nitride etch within the same hardware, the PlasmaPro100 Polaris offers a unique capability for gallium nitride-based RF device plasma etch processing requirements.
The technology offers a high SiC etch rate, enabling maximum throughput. It results in smooth sidewalls for problem-free post-etch metallization, and it provides high selectivity to the underlying gallium nitride layer, giving a smooth, low-damage stop onto the GaN device layers.
Clamping of sapphire carriers using Oxford Instruments’ unique patented Electrostatic Clamp technology ensures excellent sample temperature control and maximum yield. The instruments provide the capability of etching SiC and GaN in the same tool through advanced plasma source technology. High utilization is provided by long Mean Time Between Cleans (MTBC).
According to Dr. Mark Dineen, Optoelectronics Product Manager at Oxford Instruments Plasma Technology, “Our applications specialists have spent significant time developing this SiC via etch process on the PlasmaPro100 Polaris etch system, enabling high selectivity and throughput, among other benefits. These benefits will enable our customers to etch both SiC and GaN in the same tool through advanced plasma source technology.”
