Engineering researchers at the University of Arkansas, Fayetteville, have designed integrated circuits on silicon–carbide wafers that can survive at temperatures greater than 660°F (350°C).
Circuits on silicon-carbide wafer can function at 660°F
Mask blank inspection system designed for technology nodes of 14nm through 7nm
Lasertec Corp., San Jose, Calif., introduces MAGICS series M8350/M8351, a new line of mask blank inspection systems that meet the requirement of next-generation semiconductor photomasks at the technology nodes of 14nm through 7nm.
III-V metal-oxide semiconductor FET performance exceeds silicon
Researchers from the University of California, Santa Barbara (UCSB), report that they have developed the highest-performing III-V metal-oxide semiconductor (MOS) field-effect transistors.
Fab equipment spending to increase by 24% in 2014
Semiconductor Equipment Manufacturing Industries (SEMI), San Jose, Calif., reports that after two years of decline, fab equipment spending for Front End facilities in 2014 is expected to increase by 24% in 2014 (US$35.7 billion).
Infrared-based troubleshooting system detects temperature distribution over a circuit board
Optotherm, Sewickley, Pa., has developed the EL troubleshooting system, which provides an alternative method of fault detection based on detection of infrared radiation.