Applied Materials Inc., Santa Clara, Calif., announces that it collaborated with Samsung Electronics Co. Ltd. and Korea’s PSK Inc. to develop an advanced patterning solution for the manufacture of future generations of NAND and DRAM device designs.
Researchers at Purdue University, West Lafayette, Ind., have created the first modern complementary metal-oxide-semiconductor device in which germanium is the semiconductor instead of silicon.
Electro Scientific Industries Inc., Portland, Ore., introduces the CornerStone ICP Series 1 UV laser drilling system designed initially for integrated circuit packaging applications.
With a 3D printed twist on an automotive icon, the Department of Energy’s Oak Ridge National Laboratory, Tenn., showcased additive manufacturing research at the 2015 North American International Auto Show in Detroit.
A research team led by North Carolina State University, Raleigh, made two advances in multiferroic materials, including the ability to integrate them on a silicon chip, which will allow the development of new electronic memory devices.
