Engineering researchers at the University of Arkansas in Fayetteville have developed an infrared detector made of thin films of GeSn semiconductor material deposited on a silicon substrate.
A-STAR, Singapore, announces that four joint laboratories, representing a commitment of $160 million between private and public sectors, were launched this summer between the Agency for Science, Technology and Research’s (A*STAR’s) Institute of Microelectronics, and its ten industry partners.
Advantech US Inc., Pittsburgh, reports that its engineers working with Penn State’s Nanofabrication Laboratory have fabricated a prototype mask of silicon etched with the required micrometer-scale features.