Researchers at Stanford Engineering have developed an ultrathin material that conducts electricity better than copper and could enable more energy-efficient nanoelectronics.
A new ultrathin conductor for nanoelectronics
Reducing TOPCon solar cell degradation via copper plating
Researchers at the University of New South Wales, Australia, have created a protective barrier on the front silver grid of a TOPCon solar cell using a 1 µm copper plating layer, which reduces corrosion susceptibility and significantly lowers contaminant-induced degradation compared to unprotected reference devices.
Advantest unveils T5801 ultra-high-speed memory test system to power next-generation DRAM devices
Semiconductor test equipment supplier Advantest Corporation, Japan, announced the T5801 Ultra-High-Speed DRAM Test System to support the latest advancements in high-speed memory technologies —including GDDR7, LPDDR6, and DDR6— critical to meeting the growing demands of artificial intelligence, high-performance computing, and edge applications.
First full wafer-scale fabrication of electrically-pumped GaAs-based nano-ridge lasers on 300 mm silicon wafers
Imec, Belgium, a world-leading research and innovation hub in nanoelectronics and digital technologies, has announced a significant milestone in silicon photonics with the successful demonstration of electrically-driven GaAs-based multi-quantum-well nano-ridge laser diodes fully, monolithically fabricated on 300 mm silicon wafers in its CMOS pilot prototyping line.
Nikon’s NEXIV VMF-K Series enhances measurement speed for precision inspection
Nikon Corporation, Japan, launched the NEXIV VMF-K Series, a next-generation video measuring system designed to meet the increasing demands of semiconductor and electronic component inspection while significantly improving measurement throughput.