Hitachi High-Tech Corporation, Japan, launched the GT2000 high-precision electron beam metrology system to meet the needs of semiconductor device development and mass production in the high-NA EUV generation.
The National Institute of Standards and Technology ongoing project will improve time-resolved-emission microscopy by tailoring its’ single-photon detectors and scaling up these sensors to the megapixel level.
Researchers at Stanford University have demonstrated that a new material may make phase-change memory an improved option for future AI and data-centric systems.
Researchers at the Technion – Israel Institute of Technology, Israel, have shown how to exploit the natural nonlinearity of silicon to track the propagation of light through a circuit to characterize a chip’s performance.
Sigray, Concord, Calif., released the first commercial x-ray assisted device alteration tool that enables circuit debugging of emerging backside power delivery architectures.
