Intel Foundry has created the world’s thinnest gallium nitride chiplet, measuring just 19 micrometers thick, along with the industry’s first fully monolithic on-die digital control circuits built on a 300 millimeter GaN-on-silicon wafer.
A research team at Pohang University of Science and Technology, South Korea developed an interferometric second-harmonic generation imaging approach capable of optically identifying hidden structural defects in thin films of hexagonal boron nitride, a promising material for next-generation semiconductor technologies.
A multi-disciplinary team led by Cornell University, Ithaca, N.Y., has developed a material that is both tunable and efficient, marking an achievement that was one of the most elusive goals in microwave electronics.
Sony Semiconductor Solutions, Japan, and imec, Belgium, have unveiled a high-density “local BDI” module for 3D chip stacking that allows through-silicon vias to connect through up to 500nm of bulk silicon, unlocking advanced logic and DRAM applications without needing to completely remove the silicon.
Materials scientists at Rice University, Houston Texas, have developed a custom Python-based software tool that uses high-resolution X-ray diffraction to rapidly analyze microscopic defects and calculate dislocation density in diamond and other advanced semiconductor materials.
