This new profile series introduces leading materials scientists from around the world who happen to be females. Here we speak with Ida Berglund, materials design engineer for QuesTek Innovations LLC.
How a Scanning Tunneling Microscope Works
This video explains how scientists observe surfaces at the atomic level with a scanning tunneling microscope.
One Minute Mentor: Plasma-Immersion Ion Implantation
The fundamental difference between plasma nitriding (glow discharge) and plasma-immersion ion implantation (PIII) is that the latter relies on high-energy pulses (up to 45 kV) that promote a low-energy ion implantation in the target, but that is still less than the energy used in conventional ion implantation (>100 kV). A combination of target temperature and pulse voltage achieve the desired implantation profile.
Illinois team advances GaN-on-silicon for scalable high electron mobility transistors
A team of researchers at the University of Illinois at Urbana-Champaign has advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device.
Beta gallium oxide experimental transistor demonstrates ultra-wide bandgap
Purdue University, West Lafayette, Ind., reports that its researchers have demonstrated the high-performance potential of an experimental transistor made of beta gallium oxide, which could bring new ultra-efficient switches for applications such as the power grid, military ships, and aircraft.