Researchers at Kyushu University, Japan, report that they have developed a new technique to produce thin films of germanium crystals at a temperature of 250°C. Using gold as a catalyst, Prof. Taizoh Sadoh and his colleagues were able to grow germanium crystals in such a way that their crystal structure has the proper orientation and electrical properties. The new method can be used to produce germanium films with a very large area, allowing for more potential applications.
The thin films are key components for next-generation electronic devices such as advanced large-scale integrated circuits and flexible electronics, which are required for gadgets that move or bend. Unlike conventional methods, the new approach does not require high temperatures or other crystals to act as seeds to grow the germanium crystal.
Charged particles move through germanium more readily than they do through silicon, making germanium a good material for electronics. In particular, it is a promising material for the thin-film transistors that are needed for flexible electronics. However, the germanium would have to be grown on malleable materials, which tend to soften at temperatures above 300°C. The challenge is to grow germanium at lower temperatures.
