Picosun Group, Finland, reports excellent results with its next generation R&D PEALD (plasma-enhanced ALD) technology, which enables deposition at low temperatures and of several materials that could not be deposited with thermal processes only.
However, the drawback of PEALD is damage to the sample surface, caused by ion bombardment. Picosun’s solution to this is a remote plasma method, where the plasma source is located high above the sample, and the reactive species hitting the surface are radicals, not high-energy ions.
The compact, lightweight plasma generator can be integrated to existing Picosun R&D ALD reactors as such. The new plasma-ALD solution realizes deposition with virtually no added particles, with extremely low metal contamination, and with far shorter cycle times compared to the previously used method.
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