Engineers from Jeol Ltd., Japan, and Jeol USA will discuss at ISTFA 2019 the use of a high-energy electron spectrometer for the failure analysis of semiconductor devices. The voltage contrast observed by means of a scanning electron microscope and focused ion beam is a common failure analysis technique for semiconductor devices.
This voltage contrast (VC) information allows understanding of failure localization issues. In general, the VC images are acquired using secondary electrons from a sample surface at an acceleration voltage of 0.8 to 2.0 kV in the scanning electron microscope.
In this study, the goal was to determine the optimized electron energy range for VC acquisition, using Auger Electron Spectroscopy for quantitative understanding.
Title: “Analysis of Voltage Contrast in Secondary Electron Image using High Energy Electron Spectrometer”
Ms. Natsuko Asano, Dr. Shunsuke Asahina, JEOL Ltd., Akishima, Tokyo, Japan
Dr. Natasha Erdman , JEOL USA Inc., Peabody, Massachusetts
Monday, November 11, 2019: 4:00 PM
D 137/138 (Oregon Convention Center)
