NEO Semiconductor, San Jose, Calif., a leading developer of innovative architectures for 3D NAND flash and DRAM memory, launched its latest technology offering, X-DRAM, at Flash Memory Summit 2022. X-DRAM offers extraordinary improvements over conventional DRAM by lowering the power consumption and increasing the performance of the main memory used in IT systems and consumer products.
“Not only is X-DRAM expected to have a significant impact on the global DRAM market, but it will also serve environmental, social, and corporate governance (ESG) goals,” says Andy Hsu, Founder and CEO of NEO Semiconductor and an accomplished technology inventor with more than 120 granted U.S. patents. “X-DRAM can lower refresh power by more than 80% through a combination of 50% refresh frequency and 25% refresh time. It also lowers main memory latency and narrows the processor-to-memory performance gap. As a result, it dramatically reduces the power consumption of IT infrastructure and consumer products, leading to much lower greenhouse gas (GHG) emissions.”
Power consumption and latency performance have led to alarming environmental and economic concerns. Products incorporating X-DRAM will be able to address these concerns, providing compelling competitive advantages across business and consumer markets.
The unique X-DRAM solution is compatible with current DRAM manufacturing technologies, processes, structures, and dies. X-DRAM has a wide range of use cases, from cloud servers to mobile devices to IoT objects. Semiconductor manufacturers can quickly incorporate X-DRAM architecture without increasing manufacturing costs.
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