Boeing commits $7 million CAD to Vac Aero for vacuum furnace purchase

Boeing announced a $7 million CAD commitment to Vac Aero International Inc., a Canadian aerospace and defence supplier with operations in Ontario and Quebec, as part of the CP8A Poseidon Industrial and Technological Benefits (ITB) program. Boeing will purchase two vacuum furnaces for its Tube, Duct and Reservoir Center in Algona, Washington, where they will heat treat tube and duct assemblies critical to various Boeing airplane programs and select space and defense work. “This ITB investment underscores Boeing’s commitment to Canada following the CP8A Poseidon selection and to modern manufacturing and Canadian small businesses,” said Al Meinzinger, Boeing Canada President. Vac Aero CEO Michael Miasek noted the purchase commitment will allow the company to further expand its Canadian manufacturing capacity.

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Applied Materials and Tokyo Electron to merge and form new company

Applied Materials Inc., Santa Clara, Calif., and Tokyo Electron Ltd., Japan, announce a definitive agreement to merge into a new company whose name has not been released. This combination brings together complementary leading technologies and products to create an expanded set of capabilities in precision materials engineering and patterning. The companies expect the transaction to close in mid to second half of 2014.

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Innovnano invests in facility for nanostructured powders

Innovnano, Lisbon, Portugal, has invested in a high-tech, brand new facility for production of its nanostructured powders, including 3 and 4 mol % yttria stabilized zirconia (YSZ). The new site is based in a dedicated technology park in Coimbra, Portugal, and has been designed to allow high capacity expansion and industrial-scale nanotechnology, enabling the production of up to 1000 metric tons per annum.

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Inspecting, testing, and measuring SiC

Achieving the auto industry’s stringent zero-defect goals is becoming a big challenge for makers of silicon carbide substrates, which are struggling to achieve sufficient yields and reliability as they migrate from 150 to 200 mm wafers and shift their focus away from pure silicon.

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TZ6000 – a nondestructive wafer quality measurement tool for the compound semiconductor industry

ACE Solution, Taiwan, the leader and the provider in customized test solutions to meet customer needs in electrical components, devices and system manufactures, launched the TZ6000 – a nondestructive wafer quality measurement tool for the compound semiconductor industry. Incorporated with TeraPulse Lx technologies from TeraView, United Kingdom, the TZ6000 achieves nondestructive wafer quality measurements of thickness, refractive index, resistivity, dielectric constant, surface/subsurface defects at selected positions and whole wafer scanning map.

Dr. JC Chen, VP of R&D of ACE Solution, commented “The quality of the semiconductor wafer determines the maximum achievable conversion efficiency to the final device. Subsurface damages (SSD) of semiconductor wafers are easily induced during surface machining process includes rough grinding, fine grinding, and chemical mechanical polishing. Current wafer inspection systems which rely on VIS/IR/UV optical inspection can analysis the surface properties of the wafer but not the SSD, due to their low penetration depth. Terahertz (THz) wave has higher penetration depth in semiconductor wafers as silicon, silicon carbide and gallium nitride. We developed the THz-based TZ6000 to meet the market need of nondestructive inspection of the compound semiconductor wafer.”

Dr. Philip F. Taday, head of applications and principal scientist of TeraView, commented “The TeraPulse Lx system is TeraView’s world-leading product family for terahertz analysis. It has been designed to meet the needs of the material inspection in imaging or spectroscopy applications, and is ideal for compound semiconductors. The system’s modular architecture and TeraView patented laser-gated photoconductive emitters and detectors gives the user both flexibility and expandability. The system also boasts an industry-leading 3,200 ps time-delay line, as standard.”

Steve Hsu, CEO of ACE Solution, commented “ACE Solution is the leading company in providing electrical precision test, integrating service and solution. It is great opportunity to collaborate with TeraView and incorporate the TeraPulse Lx module into TZ6000 system for nondestructive wafer quality inspection. TZ6000 has high flexibilities for various sizes and forms of wafers. It is provided with TeraView’s unique THz-TDS probe for simultaneous measurement of multiple parameters of wafer characterization. TZ 6000 has a user-friendly and graphic illustrate software for quality inspection in wafer manufacturing process and R&D.”

Dr. Don Arnone, CEO of TeraView, commented “This is another first from TeraView to have a close collaboration with ACE Solution to develop this product, and we are quite confident that this product will set a new standard in compound semiconductor wafer quality analysis and defect inspection. The TeraPulse Lx system is designed with a lightweight compact core unit which allows for easy transport between locations. Incorporated with TeraView’s TeraPulse Lx modules, we can address the growing needs of the compound semiconductor wafer industry with this product.”

Image – Left: TZ6000 System incorporated with TeraPulse Lx; Middle: Steve Hsu, CEO of ACE Solution. Right: Dr. Philip Taday, Head of Application of TeraView.

For more information:

ACE Solution, Co., Ltd.

https://www.acesolution.com.tw/en/index/

TeraView

https://teraview.com/

Oxford Instruments validates contactless SiC plasma epi-prep on power devices with technology acceleration partner Clas-SiC

Oxford Instruments, UK, who recently launched its SiC substrate contactless plasma polishing solution to supersede the established chemical mechanical planarization process with a clean, dry, lower cost, higher yield, and sustainable alternative, announced it qualified whole wafer 1200V MOSFET devices with the process collaborating with Clas-SiC, further boosting confidence in the new solution and its impact on SiC power semiconductor devices.

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