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1458 items found
IBM to research graphene wafers to replace silicon
Published: July 18, 2014
IBM, Armonk, N.Y., plans to invest $3 billion over the next five years in two broad research and early stage development programs.
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25th AeroMat Conference Features Tuskegee Airman
Published: June 27, 2014
The 25th AeroMat Conference and Exposition, held June 16-19 in Orlando, Fla., featured a theme of "the latest word in aerospace materials."
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MGI strategic plan released for public comment
Published: June 25, 2014
The National Science and Technology Council's subcommittee on the MGI released for public comment a draft of its first strategic plan, to serve as a roadmap for Federal agencies as they execute on the initiative vision going forward.
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Organic thin-film transistors formed through room-temperature printing
Published: June 23, 2014
The National Institute for Materials Science, Japan, reports that engineers have developed room-temperature-printed electronics, by which electronic devices can be manufactured at room temperature under ambient atmospheric conditions.
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Cadence and Intel collaborate to support 14nm Tri-Gate design platform
Published: June 23, 2014
Cadence Design Systems Inc., San Jose, Calif., and Intel Corp., Santa Clara, Calif., announce that they are collaborating to support Intel's 14nm Tri-Gate process technology for customers of Intel Custom Foundry.
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Infinity AFM from Asylum Research enables simpler tapping-mode imaging with less noise
Published: June 23, 2014
Oxford Instruments Asylum Research, Santa Barbara, Calif., announces the new MFP-3D Infinity Atomic Force Microscope, which enables images such as the silicon nitride shown.
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SUSS MicroTec qualifies its new-generation projection lithography system
Published: June 23, 2014
SUSS MicroTec, Germany, has successfully qualified its new DSC300 Gen2 projection lithography system for volume production at a major Asian packaging house.
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High-performance MoS2 FETs made via unique doping process
Published: June 23, 2014
Semiconductor Research Corp., Research Triangle Park, N.C., reports that a team of researchers from Purdue University, Lafayette, Ind.; SEMATECH, Albany, N.Y.; and SUNY College of Nanoscale Science and Engineering, Albany, N.Y., are working on high-performance molybdenum disulfide field-effect transistors.
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Entegris opens Advanced Materials Science facility in Bedford
Published: June 23, 2014
Entegris Inc., Billerica, Mass., has inaugurated its new i2M Center for Advanced Materials Science in Bedford, Mass.
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Circuits on silicon-carbide wafer can function at 660°F
Published: June 23, 2014
Engineering researchers at the University of Arkansas, Fayetteville, have designed integrated circuits on silicon–carbide wafers that can survive at temperatures greater than 660°F (350°C).
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