Azzurro Semiconductors, Germany, has successfully achieved superior electrical performance and established a volume production track record for large size high-voltage GaN-on-Si high-voltage wafers. Unlike silicon, which has inherent limitations for fast switching at high voltage, GaN can meet these performance requirements with its excellent breakdown voltage and low leakage characteristics.
At present, the availability in the industry is still limited for production-suitable 6 in. wafers to fabricate GaN high voltage devices. Azzurro’s large-size GaN-on-Si technology will help customers boost the cost-effectiveness of power devices to the next level. Thickness homogeneity is important for high voltage devices, which have stricter requirements on breakdown voltage and leakage for each device manufactured on the wafer. Azzurro’s patented technology can achieve superior homogeneity for yield breakthroughs, and is ready for standard silicon process lines.
“By adopting GaN-on-Si technology, it is possible to develop power semiconductors up to 1700V, whereas our target market currently is 600 V,” says Erwin Ysewijn, VP Sales and Marketing. “It can replace current solutions across a broad range of power levels and targets various applications, such as hybrid and electric vehicles, solar and power supplies, SMPS (switched mode power supply), PFC (power factor corrector), and SFC (static frequency converters/inverters). Also, because GaN has higher switching speed, it can further realize the design goals of system miniaturization and cost reduction.”
